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Ultraviolet Micro-LED based on LSPs coupling enhancement

A substrate, p-type technology, applied in the fields of nanotechnology, instruments, nanotechnology, etc. for materials and surface science, can solve problems such as the inability to meet device applications and the inability to improve the quantum efficiency of ultraviolet LEDs. Achieve high internal quantum efficiency and improve luminous efficiency

Pending Publication Date: 2022-06-03
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, AlGaN-based UV LEDs face problems such as high dislocation density in the epitaxial layer brought about by the high aluminum composition, which leads to the inability to improve the quantum efficiency of UV LEDs, and cannot meet the application of devices in high luminous efficiency.

Method used

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  • Ultraviolet Micro-LED based on LSPs coupling enhancement
  • Ultraviolet Micro-LED based on LSPs coupling enhancement
  • Ultraviolet Micro-LED based on LSPs coupling enhancement

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] This embodiment provides an enhanced UV Micro-LED based on Localized Surface Plasmons (LSPs) coupling, refer to figure 1 , including an active region 1 , a p-type AlGaN layer 2 and a metal nanoparticle structure 3 . The active region 1 is disposed under the p-type AlGaN layer 2 ; the p-type AlGaN layer 2 includes a substrate 21 and a plurality of gate pillars 22 , and the gate pillars 22 are arranged on the substrate 21 at equal distances, and between adjacent gate pillars 22 A grating groove is formed; the metal nanoparticle structure 3 is arranged in the grating groove.

[0035] In application, the height of the metal nanoparticle structure is 50nm-90nm, and at this time, the relative value of electric field strength enhancement near the active region is the largest, which is 1.7.

[0036] By adjusting the height of the metal nanoparticle structure, the invention makes the plasmon resonance wavelength shift to the ultraviolet band to realize the resonance coupling wi...

Embodiment 2

[0038] On the basis of Embodiment 1, the refractive index of the p-type AlGaN layer 2 of the UV Micro-LED based on enhanced LSPs coupling provided in this embodiment is 2.5, and the p-type AlGaN layer 2 is set to a periodic grating structure. The periodic grating The period length of the structure is 300 nm.

[0039] In addition, the height of the p-type AlGaN layer 2 is 55 nm, the height of the base material is 15 nm, and the height of the gate pillar is 40 nm. The groove depth of each grating groove is 40 nm, and the sum of the bottom area of ​​each grating groove is equal to the sum of the bottom area of ​​each grating column. The bottom surface of the active region 1 is set to be square, and the size of the square is 3 μm×3 μm.

[0040] In application, the material of the metal nanoparticles 3 is aluminum. The local plasmon resonance frequencies of silver and gold are generally located in the visible light region, while the local plasmon resonance frequency of aluminum i...

Embodiment 3

[0044] On the basis of Embodiment 1 or 2, the luminous efficiency of the UV Micro-LED based on LSPs coupling enhancement provided in this embodiment is related to Internal Quantum Efficiency (IQE) and light extraction efficiency, wherein the light extraction efficiency is related to the luminescent material. related to the external structure. According to Fermi's golden rule, due to the strong electric field generated by the coupling of localized surface plasmons (LSPs) and the active region, the electric field strength is enhanced, thereby increasing the rate of energy coupling of localized surface plasmons, which in turn increases the The internal quantum efficiency of UV Micro-LEDs is calculated, and the specific reference is made to formulas (1)-(2):

[0045]

[0046]

[0047] Among them, IQE is the internal quantum efficiency of UV Micro-LED based on LSPs coupling enhancement, k lsp is the rate of energy coupling into the surface plasmon, k rad is the radiative re...

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Abstract

The invention provides an ultraviolet Micro-LED based on LSPs coupling enhancement. The ultraviolet Micro-LED comprises an active region, a p-type AlGaN layer and a metal nanoparticle structure, the active region is arranged below the p-type AlGaN layer; the p-type AlGaN layer comprises a base material and a plurality of grid columns, the grid columns are arranged on the base material at equal intervals, and a grating groove is formed between every two adjacent grid columns; the metal nanoparticle structure is arranged in the grating groove, and the height of the metal nanoparticle structure ranges from 50 nm to 90 nm. Resonance coupling of the active area can be achieved, when the height of the metal nanoparticles is 90 nm, the intensity enhancement relative value of an electric field near the active area is 1.7, and compared with an existing ultraviolet Micro-LED, the ultraviolet Micro-LED has higher internal quantum efficiency, and therefore the light emitting efficiency of the ultraviolet Micro-LED can be improved.

Description

technical field [0001] The invention belongs to the technical field of light emitting diodes, and in particular relates to an ultraviolet Micro-LED based on enhanced coupling of LSPs. Background technique [0002] Micro-LEDs (Micro-LEDs) have the same light-emitting principle as traditional LEDs. Under the action of forward bias, holes and electrons move to the active region to radiate compound light. The size of Micro-LED devices is in the micron level, that is, the traditional LED devices are miniaturized and arrayed. Therefore, Micro-LEDs have excellent characteristics such as small size, good energy saving, and high luminous efficiency. In addition to being widely used in visible light communication, biomedicine and other fields, Micro-LED display technology has also been highly valued in all walks of life. The use of UV LEDs and quantum dot materials for light conversion can achieve full-color technology. For LEDs, high luminous efficiency plays an important role in di...

Claims

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Application Information

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IPC IPC(8): H01L33/44H01L33/58G02B5/00B82Y30/00
CPCH01L33/44H01L33/58G02B5/008B82Y30/00
Inventor 张玉葛凡谢思扬陶志阔
Owner NANJING UNIV OF POSTS & TELECOMM
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