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Bright and dark soliton mode-locked laser based on CVD-bismuth selenide saturable absorber

A saturable absorption, mode-locked laser technology, applied in the field of bright and dark soliton mode-locked lasers, can solve the problems of insufficient crystal quality and small particle size of nanosheets, achieve high laser damage threshold, large modulation depth, and improve output energy performance effect

Inactive Publication Date: 2022-06-07
台州同合激光科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

So far, Bi 2 Se 3 Saturable absorbers are mostly prepared by polyol method and liquid phase exfoliation (LPE) method, but the Bi obtained by these two methods 2 Se 3 The crystallization quality of nanosheets is not good enough and the particle size is small

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  • Bright and dark soliton mode-locked laser based on CVD-bismuth selenide saturable absorber
  • Bright and dark soliton mode-locked laser based on CVD-bismuth selenide saturable absorber
  • Bright and dark soliton mode-locked laser based on CVD-bismuth selenide saturable absorber

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Embodiment Construction

[0023] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0024] see Figure 1-5 The present invention provides a technical solution: a bright and dark soliton mode-locked laser based on a CVD-bismuth selenide saturable absorber, comprising a first pump source, a second pump source and an optical fiber resonant cavity, and the optical fiber resonant cavity consists of a wave Division 1, erbium-doped fiber, wavelength division multiplexer 2, polarization controller 1, 100m single-mode fiber, ...

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Abstract

The invention discloses a bright and dark soliton mode-locked laser based on a CVD-bismuth selenide saturable absorber, which relates to the technical field of laser and comprises a first pumping source, a second pumping source and an optical fiber resonant cavity. The optical fiber resonant cavity is formed by sequentially connecting a wavelength division multiplexer I, an erbium-doped optical fiber, a wavelength division multiplexer II, a polarization controller I, a 100m single-mode optical fiber, a saturable absorber, a polarization independent isolator, a polarization controller II and an output coupler end to end; the saturable absorber based on bismuth selenide (Bi2Se3) is prepared through a chemical vapor deposition (CVD) method, and the CVD-Bi2Se3 saturable absorber has the advantages of being excellent in saturable absorption characteristic, rich in nonlinear effect, high in damage threshold value and the like. According to the bright and dark soliton mode-locked laser based on the CVD-bismuth selenide saturable absorber, bright soliton pulse output and bright and dark soliton pulse output are achieved, and the average output power / pulse energy is 82.6 mW / 48.3 nJ and 81.2 mW / 47.5 nJ respectively.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to a bright and dark soliton mode-locked laser based on a CVD-bismuth selenide saturable absorber. Background technique [0002] Mode-locked fiber lasers have been widely used in optical communication, optical sensing, material processing, biomedical diagnosis, and spectroscopy. Since the optical transmittance of saturable absorbers (SAs) increases with the light intensity in the laser cavity, they are often used to obtain mode-locked operation. In recent years, graphene and other two-dimensional (2D) materials such as topological insulators (TIs), transition metal dichalcogenides (TMDs), Metal compounds (TMDs), black phosphorus (BP), etc.) have become the first choice for the preparation of SA. With the growing demand for mode-locked fiber lasers, high-performance SAs made of 2D materials have attracted increasing attention. [0003] Recently, a class of materials known as topolo...

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Application Information

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IPC IPC(8): H01S3/098C23C16/30H01S3/067
CPCC23C16/305H01S3/1106H01S3/06708Y02P70/50
Inventor 张华年张晗孙硕尚新新孙新
Owner 台州同合激光科技有限公司