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Composite material, quantum dot light emitting diode and preparation method of quantum dot light emitting diode

A quantum dot light-emitting and composite material technology, applied in the field of quantum dot light-emitting diodes, can solve the problem of low carrier transmission efficiency, achieve the effects of improving luminous efficiency, improving stability, and promoting recombination

Pending Publication Date: 2022-07-01
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above deficiencies in the prior art, the object of the present invention is to provide a composite material, a quantum dot light-emitting diode and a preparation method thereof, aiming at solving the problem of low carrier transport efficiency of the existing quantum dots

Method used

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  • Composite material, quantum dot light emitting diode and preparation method of quantum dot light emitting diode
  • Composite material, quantum dot light emitting diode and preparation method of quantum dot light emitting diode
  • Composite material, quantum dot light emitting diode and preparation method of quantum dot light emitting diode

Examples

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Effect test

Embodiment 1

[0101] FeN in this example 4 The preparation steps of -CdS / ZnS composites are as follows:

[0102] 1), the appropriate amount of FeCl 3 and ammonium chloride were dissolved in 10 ml of dimethyl sulfoxide (molar ratio, Fe:N=1:5), after ultrasonic dissolution, the mixed solution was transferred to a high-pressure high-temperature reaction kettle. First, apply a high pressure of 10GPa to the reaction raw materials. After the pressure rises to a predetermined pressure, the temperature is raised to 300 ° C, and the temperature is maintained for 2 hours. Finally, the temperature is lowered at a fixed pressure. After cooling to room temperature, pressure relief treatment is performed to obtain FeN. 4 type semi-metal;

[0103] 2), adding an appropriate amount of CdS / ZnS quantum dots into 20 ml of ODE to form a quantum dot solution with a concentration of 20 mg / mL. Subsequently, the temperature was raised to 200°C in an argon atmosphere, and then thioglycolic acid (volume ratio, qua...

Embodiment 2

[0106] In this example, MnN 4 -Cd 1-x Zn x The preparation steps of the S composite material are as follows:

[0107] 1), the appropriate amount of MnCl 2 and urea were dissolved in 10 mL of N,N-dimethylformamide (molar ratio, Mn:N=1:6), and after ultrasonic dissolution, the mixed solution was transferred to a high-pressure high-temperature reaction kettle. First, apply a high pressure of 12GPa to the reaction raw materials. After the pressure rises to a predetermined pressure, the temperature is raised to 350 °C, and the temperature is maintained for 3 hours. Finally, the temperature is lowered at a fixed pressure. After cooling to room temperature, pressure relief treatment is performed to obtain MnN 4 type semi-metal;

[0108] 2), put an appropriate amount of Cd 1-x Zn x S quantum dots were added to 20 ml of 1-hexadecene to form a quantum dot solution with a concentration of 30 mg / mL. Subsequently, the temperature was raised to 200° C. in an argon atmosphere, followed ...

Embodiment 3

[0111] CoN in this embodiment 4 -Cd 1-x Zn x The preparation steps of S / ZnS composites are as follows:

[0112] 1), the appropriate amount of CoCl 2 and urea were dissolved in 10 mL of tetrahydrofuran (molar ratio, Co:N=1:7), after ultrasonic dissolution, the mixed solution was transferred to a high-pressure high-temperature reaction kettle. First, apply a high pressure of 15GPa to the reaction raw materials. After the pressure rises to a predetermined pressure, the temperature is raised to 400 °C, and the temperature is maintained for 2 hours. Finally, the temperature is lowered at a fixed pressure. After cooling to room temperature, pressure relief treatment is performed to obtain CoN. 4 type semi-metal;

[0113] 2), put an appropriate amount of Cd 1-x Zn x S / ZnS quantum dots were added to 20 ml of 1-eicosene to form a quantum dot solution with a concentration of 50 mg / mL. Subsequently, the temperature was raised to 200°C in an argon atmosphere, and then mercaptoethyl...

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Abstract

The invention discloses a composite material, a quantum dot light-emitting diode and a preparation method of the quantum dot light-emitting diode. The composite material comprises quantum dots and MN4 type semimetal, the quantum dots are combined with the MN4 type semimetal, and M in the MN4 type semimetal is a metal atom with the outermost layer being a 3d electron orbit. In the invention, as the MN4 type semimetal has high carrier mobility, the carrier transport performance of the quantum dots can be improved by combining the MN4 type semimetal with the quantum dots, electrons and holes are promoted to be effectively compounded on the quantum dots, and the luminous efficiency of the device is improved; meanwhile, the influence of exciton accumulation on the performance of the device can be reduced, and the stability of the device is improved.

Description

technical field [0001] The invention relates to the field of quantum dot light emitting diodes, in particular to a composite material, a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] Today's mainstream display technology is LCD display technology, which requires a backlight source, and has many limitations such as high power consumption, complex structure and process, and high cost. When quantum dots replace traditional phosphors, the color gamut of the display can be greatly improved. The application of quantum dots in backlight modules shows that the color gamut of the display can be increased from 72% NTSC to 110% NTSC. However, when quantum dots get rid of backlight technology and use active matrix quantum dot light-emitting diode display devices (QLEDs), compared with traditional backlight LCDs, self-luminous QLEDs display in black performance and high brightness conditions. The effect is more prominent, the power con...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/56C09K11/60C09K11/57B82Y20/00B82Y30/00H01L51/50H01L51/54H01L51/56
CPCC09K11/02C09K11/565C09K11/60C09K11/57C09K11/0883B82Y20/00B82Y30/00H10K50/115H10K71/00
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
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