The invention discloses a method for adjusting and controlling interaction of a ferromagnetic multilayer film, belongs to the technical field of high-density
information storage and sensing, and relates to a method for adjusting and controlling DM interaction of a ferromagnetic multilayer film. The
platinum (Pt) /
cobalt (Co) /
tantalum (Ta) multilayer film is deposited on a
Si substrate which is subjected to surface acidizing treatment and ultrasonic cleaning. After deposition is completed, As ions are implanted into the film, the spin-
orbit coupling strength of the multilayer film is influenced through As
ion adjustment and
electron orbit occupation at an interface, and therefore the DM interaction of the ferromagnetic multilayer film is adjusted and controlled. According to the method,
orbit occupation of the multilayer film interface is directly adjusted through an As
ion implantation method, and therefore the spin-orbit
coupling effect is changed, the DM interaction of the multilayer film interface is finally adjusted and controlled, and the method does not depend on a special
material system and has universality; and according to the method, different degrees of adjustment and control of DM interaction can be realized by changing parameters such as an implanted
ion source, implanted energy and implanted density, the process is simple, the cost is low,
controllability is high, and the method can be applied to the
spintronics technology in the future.