This invention relates to the field of
semiconductor device technology, specifically to a
semiconductor laser element with a two-dimensional
phonon and three-dimensional charge
transport layer. The
semiconductor laser element has a two-dimensional
phonon and three-dimensional charge
transport layer between the
active layer and the upper
waveguide layer, and between the
active layer and the lower
waveguide layer. This layer is a two-dimensional moiré
superlattice structure composed of one or more of SnSe, AgSbT2, SnTe, ZrNiSn, Bi2Te3, and NbFeSb. This layer promotes electronic hybridization, introduces local strain modulation of
phonon vibrations, enhances atomic order, reduces
phonon scattering, and simultaneously enhances
phase transition-induced
electron orbital overlap and two-dimensional phonon and three-dimensional charge transport. It also reduces the
valence band order of the
laser, enhances carrier localization, hole transport, and
stimulated emission of the laser element, lowers the excitation threshold of the laser element, enhances bipolar
conductivity, improves continuous oscillation below
room temperature, enhances the confinement factor and peak
gain, reduces the laser
voltage, and improves the
optical power and
slope efficiency of the laser element.