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33 results about "Electron orbital" patented technology

An electron orbital describes the orbit of an electron around the nucleus. An electron orbital describes a three-dimensional space where an electron can be found 90% of the time. An electron orbital describes the exact distance of an electron from the nucleus.

Method for adjusting magnetic anisotropy of magnetic tunnel junction and corresponding magnetic tunnel junction

The invention belongs to the field of spintronics application, and discloses a method for adjusting magnetic anisotropy of a magnetic tunnel junction and the corresponding magnetic tunnel junction, the adjusting method is specifically characterized in that a metal interlayer is inserted into a film layer structure of the magnetic tunnel junction to control contribution of an electron orbit coupling effect, so that adjustment of the magnetic anisotropy of the magnetic tunnel junction is realized; an initial film layer structure of the magnetic tunnel junction sequentially comprises a barrier layer, a ferromagnetic layer and a non-magnetic metal covering layer. The method is based on the interface effect, the distribution of the Bloch electronic state near the Fermi level is changed by adding the metal interlayer, so that the contribution of a coupling action item between electron orbits is controlled, the magnetic anisotropy of the magnetic tunnel junction is accurately adjusted (such as atomic magnetic moment and magnetic anisotropy performance, magnetoelectric coefficient and the like of the magnetic tunnel junction), and various requirements in practical application are met. Especially, high enough vertical magnetic anisotropy can be obtained to solve the problem that the writing power consumption of the spin transfer torque magnetic memory is too high.
Owner:HUAZHONG UNIV OF SCI & TECH

Formed body, production method thereof, electronic device member and electronic device

The present invention is a formed body, a production method thereof, an electronic device member comprising the formed body, and an electronic device comprising the electronic device member, the formed body being formed by sequentially layering a base layer, a primer layer and a gas barrier layer, characterized in that: the primer layer is configured from a material containing at least carbon atoms, oxygen atoms and silicon atoms, and in which the binding energy peak position of the 2p electron orbital in the silicon atom is 101.5 to 104 eV in the X-ray photoelectron spectroscopy (XPS) measurement; and the gas barrier layer is configured from a material containing (I) a layer obtained by implanting an ion in a polymer layer containing at least one type selected from a group comprising a polysilazane-based compound, a polyorganosiloxane-based compound, a polycarbosilane-based compound and a polysilane-based compound, or (II) at least oxygen atoms and silicon atoms, the proportion of oxygen atoms present being 60 to 75%, the proportion of nitrogen atoms present being 0 to 10%, and the proportion of silicon atoms present being 25 to 35%, with respect to the entire amount of oxygen atoms, nitrogen atoms and silicon atoms in the surface portion, and the film density in the surface layer portion being 2.4 to 4.0 g / cm3.
Owner:LINTEC CORP

Vortex electronic mode identification system, method and device and electronic equipment

The invention discloses a vortex electron modal identification system, method and device and electronic equipment. The system comprises a vortex electron generation module, a diffraction amplification module, an image receiving and collecting module, a data processing and recognition module, a training data preparation sub-module, an artificial intelligence model training sub-module and a modal identification module. Cyclotron electrons generated by the vortex electron generation module are coupled with the orbital angular momentum to generate vortex electron beams carrying different modes of OAM (orbital angular momentum); the diffraction amplification module diffracts and amplifies the vortex electron beam. The image receiving and collecting module is used for receiving the vortex electron beam subjected to diffraction amplification and collecting an OAM field intensity distribution image; the data processing and identification module receives the OAM field intensity distribution image and carries out OAM modal identification. The system not only realizes vortex electronic orbital angular momentum modal identification, but also can reduce the influence of nonlinear distortion on an identification result, is relatively high in identification accuracy, and is very low in hardware complexity and cost.
Owner:TSINGHUA UNIV

Metal monatomic doped biomass charcoal adsorption material as well as preparation method and application thereof

The invention relates to a metal monatomic doped biomass charcoal adsorption material, a preparation method and application thereof. The metal monatomic doped biomass charcoal adsorption material has the advantages that the environmental concentration in drinking water is 0.3 mu g/Llt; clt; ct; 1 [mu] g/L) difficult-to-degrade organic matters are efficiently adsorbed and removed. An atomic-scale heterojunction interface exists in the material, so that an effective interface electric field can be formed, a monatomic structure is combined, an effective electron migration channel is constructed, and the electron migration capability is enhanced. In the process of adsorbing the organic matters with the environment concentration difficult to degrade in the water body, metal monatomic atoms generate relatively strong coulomb force and can attract a part with heterogeneous charges in a target object; c atoms in the second shell layer belonging to metal single atoms can effectively activate electrons in electron orbits on the outer layers of the metal atoms, and strong interaction between the C atoms and the electrons can further improve the adsorption performance and the adsorption stability, so that high-efficiency removal of environment-concentration refractory organics in drinking water is realized. In addition, the adsorption material is simple in preparation process, wide in raw material source, low in price and easy for large-scale production.
Owner:NORTH CHINA ELECTRIC POWER UNIV (BAODING)

Method and device for reconstructing electron orbit space distribution and electron beam function

The invention discloses a method and device for reconstructing electron orbit space distribution and an electron beam function, and the method comprises the steps: controlling a mobile electron beam to scan a sample, and obtaining the diffraction intensity of each scanning position of the sample; initializing a sample transmission function and an electron beam function, establishing a forward propagation model containing to-be-optimized parameters according to the diffraction intensity, the sample transmission function and the electron beam function, and calculating a loss function value; the derivative of the loss function about the to-be-optimized parameter is solved, the gradient of the to-be-optimized parameter in the sample transmission function and the electron beam function is obtained, the to-be-optimized parameter is optimized according to the gradient, the loss function value is updated, the iteration process is repeated until the iteration termination condition is met, and the optimized sample transmission function and the optimized electron beam function are output. According to the embodiment of the invention, the resolution of sub-pixel precision can be realized, and parameterized information such as atomic position and electron orbit space distribution can be directly obtained on the basis of keeping the advantages of traditional laminated imaging.
Owner:TSINGHUA UNIV

A method for analyzing the performance of resistance valve plate in zinc oxide arrester

The invention discloses a method for analyzing the performance of a resistance valve plate in a zinc oxide lightning arrester. The first principle is used to construct the two-phase grain boundary structure of a ZnO resistance valve plate by a computer; the CASTEP software package is used to optimize the structure of the unit cell; Perform relaxation calculations on the grain boundary structure, compare the grain boundary structure before and after relaxation, and analyze the atomic displacement; perform secondary differential charge density analysis and atomic electron population analysis on the relaxed grain boundary structure; conduct electronic potential energy of the grain boundary structure Analysis and interfacial atomic fractional wave density of states analysis. Compared with the experimental measurement method, the present invention studies the microstructure existing inside the ZnO resistance valve sheet, analyzes the built-in electric field of the grain boundary structure, determines the charge amount of the electron track of the interface atoms, analyzes the bonding situation of the atoms in the layer sheet, and analyzes the internal electric field of the grain boundary structure. It is of great significance to improve the nonlinear volt-ampere characteristics of materials and develop high-performance zinc oxide arresters.
Owner:CHINA THREE GORGES UNIV

Method for adjusting and controlling DM interaction of ferromagnetic multilayer film

The invention discloses a method for adjusting and controlling interaction of a ferromagnetic multilayer film, belongs to the technical field of high-density information storage and sensing, and relates to a method for adjusting and controlling DM interaction of a ferromagnetic multilayer film. The platinum (Pt) / cobalt (Co) / tantalum (Ta) multilayer film is deposited on a Si substrate which is subjected to surface acidizing treatment and ultrasonic cleaning. After deposition is completed, As ions are implanted into the film, the spin-orbit coupling strength of the multilayer film is influenced through As ion adjustment and electron orbit occupation at an interface, and therefore the DM interaction of the ferromagnetic multilayer film is adjusted and controlled. According to the method, orbit occupation of the multilayer film interface is directly adjusted through an As ion implantation method, and therefore the spin-orbit coupling effect is changed, the DM interaction of the multilayer film interface is finally adjusted and controlled, and the method does not depend on a special material system and has universality; and according to the method, different degrees of adjustment and control of DM interaction can be realized by changing parameters such as an implanted ion source, implanted energy and implanted density, the process is simple, the cost is low, controllability is high, and the method can be applied to the spintronics technology in the future.
Owner:UNIV OF SCI & TECH BEIJING
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