Method for adjusting and controlling DM interaction of ferromagnetic multilayer film

Abstract

The invention discloses a method for adjusting and controlling interaction of a ferromagnetic multilayer film, belongs to the technical field of high-density information storage and sensing, and relates to a method for adjusting and controlling DM interaction of a ferromagnetic multilayer film. The platinum (Pt) / cobalt (Co) / tantalum (Ta) multilayer film is deposited on a Si substrate which is subjected to surface acidizing treatment and ultrasonic cleaning. After deposition is completed, As ions are implanted into the film, the spin-orbit coupling strength of the multilayer film is influenced through As ion adjustment and electron orbit occupation at an interface, and therefore the DM interaction of the ferromagnetic multilayer film is adjusted and controlled. According to the method, orbit occupation of the multilayer film interface is directly adjusted through an As ion implantation method, and therefore the spin-orbit coupling effect is changed, the DM interaction of the multilayer film interface is finally adjusted and controlled, and the method does not depend on a special material system and has universality; and according to the method, different degrees of adjustment and control of DM interaction can be realized by changing parameters such as an implanted ion source, implanted energy and implanted density, the process is simple, the cost is low, controllability is high, and the method can be applied to the spintronics technology in the future.

Description

technical field [0001] The invention belongs to the technical field of high-density information storage and sensing, and relates to a method for controlling the DM interaction of a key core material unit in the above-mentioned field—a ferromagnetic metal multilayer film. Electron orbital occupation and spin-orbit coupling at the interface to regulate the DM interaction of ferromagnetic multilayer films. Background technique [0002] In ferromagnetic (FM) multilayers, strong interfacial Dzyaloshinskii-Moriya (DM) interactions occur when ferromagnetic layers are in contact with heavy metals (HM) with large spin-orbit coupling (SOC). The DM interaction is an antisymmetric exchange interaction that favors the neighboring spin S 1 and S 2 The use of this special spin structure can realize information storage, so it has the potential to be used in future high-density, low-power magnetic storage logic devices. However, there are still many problems to be solved during its applic...

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Problems solved by technology

However, since the oxides in the above system are generally only a few nanometers, it is difficult to ensure good insulation. At this time, when a high voltage is applied, it may cause breakdown or short circuit, which will affect the effect and uniformity of regulation to a certain extent.

At the same time, due to the charge shielding effect of metal materials, this method of electric field manipulation of DM interaction is difficult to be directly applied to commonly used pure metal thin film systems such as Pt / Co / Ta, Ir / Fe / Co / Pt, etc.

In summary, although some research work has been carried out on the regulation of the DM interaction of thin film materials in the world, the existing regulation methods rely on special material systems, cannot achieve dynamic regulation after film formation, or have poor regulation uniformity. Therefore, how to efficiently and simply control the DM interaction of ferromagnetic metal multilayer films has important scientific significance and practical value for the development of a new generation of spintronic memory devices.

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