A method for tuning the dm interaction of ferromagnetic multilayer films

Abstract

A method for regulating the interaction of ferromagnetic multilayer films belongs to the technical field of high-density information storage and sensing. Platinum Pt / cobalt Co / tantalum Ta multilayer film is deposited on Si substrate after surface acid treatment and ultrasonic cleaning. After the deposition is completed, arsenic and As ions are implanted into the film, and the electron orbital occupation at the interface is adjusted by As ions to affect the spin-orbit coupling strength of the multilayer film, thereby regulating the DM interaction of the ferromagnetic multilayer film. The present invention directly adjusts the orbital occupancy of the multilayer film interface through the method of As ion implantation, thereby changing the spin-orbit coupling effect, and finally regulating the DM interaction of the multilayer film interface. This method does not depend on a special material system and is universal Moreover, this method can achieve different degrees of regulation of DM interaction by changing parameters such as implantation ion source, implantation energy, and implantation density. The process is simple, the cost is low, and the controllability is strong. It can be applied to future spintronics technology .

Description

technical field [0001] The invention belongs to the technical field of high-density information storage and sensing, and relates to a method for controlling the DM interaction of a key core material unit in the above-mentioned field—a ferromagnetic metal multilayer film. Electron orbital occupation and spin-orbit coupling at the interface to regulate the DM interaction of ferromagnetic multilayer films. Background technique [0002] In ferromagnetic (FM) multilayers, strong interfacial Dzyaloshinskii-Moriya (DM) interactions occur when ferromagnetic layers are in contact with heavy metals (HM) with large spin-orbit coupling (SOC). The DM interaction is an antisymmetric exchange interaction that favors the neighboring spin S 1 and S 2 The use of this special spin structure can realize information storage, so it has the potential to be used in future high-density, low-power magnetic storage logic devices. However, there are still many problems to be solved during its applic...

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Problems solved by technology

However, since the oxides in the above system are generally only a few nanometers, it is difficult to ensure good insulation. At this time, when a high voltage is applied, it may cause breakdown or short circuit, which will affect the effect and uniformity of regulation to a certain extent.

At the same time, due to the charge shielding effect of metal materials, this method of electric field manipulation of DM interaction is difficult to be directly applied to commonly used pure metal thin film systems such as Pt / Co / Ta, Ir / Fe / Co / Pt, etc.

In summary, although some research work has been carried out on the regulation of the DM interaction of thin film materials in the world, the existing regulation methods rely on special material systems, cannot achieve dynamic regulation after film formation, or have poor regulation uniformity. Therefore, how to efficiently and simply control the DM interaction of ferromagnetic metal multilayer films has important scientific significance and practical value for the development of a new generation of spintronic memory devices.

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