Preparation method of EIGZO target material

A target and powder technology, which is applied in the field of EIGZO target preparation, can solve the problems of low degree of controllability of raw materials, low mobility, and dependence on imports of targets, so as to ensure mobility, high mobility, and good mobility. Effect

Pending Publication Date: 2021-02-23
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the mobility of current commercial oxide semiconductors is still lower than that of LTPS technology, and the targets are depen

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] This embodiment provides an embodiment of the preparation method of the EIGZO target material of the present invention. The preparation method of the present embodiment EIGZO target comprises the following steps:

Embodiment E

[0035] This embodiment provides an embodiment of the preparation method of the EIGZO target material of the present invention. The preparation method of the present embodiment EIGZO target comprises the following steps:

[0036] (1) Mix indium oxide powder, gallium oxide powder, erbium oxide powder, zinc oxide powder, dispersant and water, and ball mill for 4 hours to obtain a solid content of 60%, a particle size of D50<0.5 μm, and a normal distribution of particle size at half maximum The first mixed slurry of <0.5, wherein the weight of dispersant is 1% of the total weight of indium oxide powder, gallium oxide powder, erbium oxide powder and zinc oxide powder, indium oxide powder, gallium oxide powder, erbium oxide powder, zinc oxide powder The mass ratio of powder is indium oxide: gallium oxide: erbium oxide: zinc oxide=60%: 20%: 3%: 17% (based on the total weight of indium oxide powder, gallium oxide powder, erbium oxide powder and zinc oxide powder Calculate, the same b...

Embodiment 2

[0045] This embodiment provides an embodiment of the preparation method of the EIGZO target material of the present invention. The preparation method of the present embodiment EIGZO target comprises the following steps:

[0046] (1) Mix indium oxide powder, gallium oxide powder, erbium oxide powder, zinc oxide powder, dispersant and water, and ball mill for 4 hours to obtain a solid content of 60%, a particle size of D50<0.5 μm, and a normal distribution of particle size at half maximum The first mixed slurry of <0.5, wherein the weight of dispersant is 1% of the total weight of indium oxide powder, gallium oxide powder, erbium oxide powder and zinc oxide powder, indium oxide powder, gallium oxide powder, erbium oxide powder, zinc oxide powder The mass ratio of powder is indium oxide: gallium oxide: erbium oxide: zinc oxide = 60%: 20%: 3%: 17%;

[0047] (2) adding 3% alcohol binder by weight of the first mixed slurry, stirring for 2 hours to obtain the second mixed slurry with ...

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Abstract

The invention provides a preparation method of an EIGZO target material, and belongs to the field of target materials. According to the invention, indium oxide powder is used as a base material, and erbium oxide is added to regulate and control the carrier concentration in the semiconductor, so that the stability of the oxide semiconductor is improved, the doping amount of erbium ions is low, the5s electron orbit integrity of In can be ensured, and the advantage of high mobility is ensured, meanwhile, indium oxide, erbium oxide, gallium oxide and zinc oxide are compounded, so that the light stability of the oxide semiconductor is further improved, and besides, by adopting a mode of sintering without introducing oxygen and then introducing oxygen, the relative density of the obtained EIGZOtarget material is improved, and the oxide semiconductor is further ensured to have better mobility.

Description

technical field [0001] The invention belongs to the field of target materials, and in particular relates to a preparation method of an EIGZO target material. Background technique [0002] Magnetron sputtering technology is an important technology for preparing high-performance thin film materials, which is used in various high-end electronic industries. The oxide thin film transistor (TFT) active layer prepared by magnetron sputtering has good mobility and stability, which can meet the needs of high-end displays such as high-resolution LCD, AMOLED, and electronic paper. Compared with the LTPS active layer , has the advantages of simple process, low cost and good uniformity. However, the mobility of current commercial oxide semiconductors is still lower than that of LTPS technology, and the targets are dependent on imports, the core patents are in the hands of foreign companies, and the degree of independent control of raw materials is low. [0003] The mobility of oxide se...

Claims

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Application Information

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IPC IPC(8): C04B35/01C04B35/622C04B35/63C23C14/08C23C14/35
CPCC04B35/01C04B35/622C04B35/6303C23C14/086C23C14/08C23C14/35C04B2235/3286C04B2235/3224C04B2235/3284C04B2235/5445C04B2235/5427C04B2235/602C04B2235/608C04B2235/656C04B2235/6562C04B2235/6567C04B2235/6583C04B2235/6565C04B2235/786C04B2235/77C04B2235/96
Inventor 刘文杰钟小华童培云朱刘
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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