6results about "Scandium oxides/hydroxides" patented technology

The application discloses a kind of red mud gradient depth purification-rare earth-radioactivity synergistic target purification method, by " hierarchical pretreatment and microwave modification→three-stage gradient dealkalization→rare earth-radioactivity synergistic target purification→full quantization recycling" four-stage integrated process, realize red mud harmless and high-value utilization.The three-stage gradient dealkalization uses microwave-CO2-biological synergic system, after dealkalization pH≤8.0, Na2O content<1%;Rare earth-radioactivity purification is extracted by HDES and coupled with multi-ligand magnetic material system, light rare earth recovery rate≥95%, middle heavy / rare earth recovery rate≥90%, U / Th removal rate≥95%;Full quantization recycling realizes red mud total utilization rate≥98.5%, wastewater reuse rate≥95%, every ton of red mud fixed CO2≥0.2 tons.The application is suitable for various high-alkali, containing radioactive and rare earth red mud treatment, with environmental benefits and economic benefits.

The application discloses a method for recovering scandium and zirconium in scandia-stabilized zirconia ceramics, and belongs to the technical field of ceramic waste resource recovery. The method comprises the following steps: performing alkali leaching pretreatment on scandia-stabilized zirconia ceramic powder to obtain mixed slurry, introducing the mixed slurry into carbon dioxide to perform carbonation selective leaching of scandium, and performing liquid-solid separation to obtain a scandium-containing leaching solution and leaching residue; performing alkali leaching of the leaching residue to extract zirconium, and performing liquid-solid separation to obtain a zirconium-containing leaching solution and tailings. The method realizes separate leaching and extraction of scandium and zirconium in ceramics by performing carbonation after alkali leaching pretreatment to leach scandium, and leaving zirconium in the residue and extracting zirconium components through secondary alkali leaching, so that the recovery rate of scandium and zirconium can be improved, and the product purity can be improved.

The application discloses a kind of pre-transition metal oxide nanoparticles and its preparation method and oxygen reduction synthesis hydrogen peroxide application.The active component of the material is pre-transition metal oxide nanoparticles.Preparation method includes: with soluble pre-transition metal salt and ammonium chloride as raw material, dissolving, evaporating to dryness to obtain mixed precursor, then by calcining at different temperatures in tube furnace to obtain pre-transition metal oxide nanoparticles.The pre-transition metal oxide nanoparticles catalyst prepared can be used for oxygen reduction to prepare hydrogen peroxide, with very high hydrogen peroxide selectivity and excellent stability, greatly improving the energy utilization efficiency.The application has the characteristics of low cost, low energy consumption, simple operation, no security risks, etc., and is suitable for large-scale industrial production.

The film is formed using one of two film-forming materials. The first film-forming material contains: particles containing a crystal phase of a rare earth element fluoride; particles containing a crystal phase of a rare earth element oxide; and particles containing a crystal phase of a rare earth element ammonium fluoride double salt. The second film-forming material contains: particles containing a crystal phase of a rare earth element fluoride; and particles containing a crystal phase of a rare earth element oxide and a crystal phase of a rare earth element ammonium fluoride double salt. If a spray coated film is to be formed by means of thermal spraying using this film-forming material or film-forming slurry in particular, it is possible to form a rare earth element oxyfluoride spray coated film without the need for excessive heat.

This invention provides a method for preparing scandium hydroxyl oxide using an acidic scandium-containing solution. The method includes the following steps: subjecting the acidic scandium-containing solution to a first-stage alkaline precipitation with a first alkaline precipitant to obtain a first-stage alkaline precipitate; subjecting the first-stage alkaline precipitate to a second alkaline precipitant and solid-liquid separation to obtain a second-stage alkaline precipitate and a second-stage alkaline precipitate product; subjecting the second-stage alkaline precipitate to a third-stage alkaline precipitation, aging, and solid-liquid separation with a third alkaline precipitant to obtain scandium hydroxyl oxide; and washing the obtained scandium hydroxyl oxide to obtain final low-impurity scandium hydroxyl oxide. The method of this invention can directly prepare scandium hydroxyl oxide using an acidic scandium-containing solution. Compared with the preparation of other scandium intermediates, it avoids the formation of soluble scandium salts and difficult-to-filter scandium hydroxide, thus directly preparing scandium intermediates with excellent filtration performance and easy processing, ensuring a very high scandium recovery rate, and shortening the production process of scandium intermediates.

The present application relates to an asymmetric metallocene scandium complex precursor and a preparation method and application thereof, and belongs to the technical field of organic chemistry.The asymmetric metallocene scandium complex precursor has a molecular formula of Sc(Cp1Cp2Cp3); wherein Cp1, Cp2 and Cp3 are each independently a substituted or unsubstituted cyclopentadienyl ligand, and the molecular structures of the three are different from each other.The present application first synthesizes a new compound cyclopentadienyl methyl cyclopentadienyl ethyl cyclopentadienyl scandium, which is the first example of a non-uniform ligand trisubstituted metallocene scandium, and the new compound is used as a precursor source material for preparing Sc2O3 thin films by an atomic layer deposition (ALD) method, and has a huge prospect in the fields of semiconductors and scientific research.