Gallium oxide Schottky diode preparation method and gallium oxide Schottky diode
A Schottky diode, gallium oxide technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as low reliability, and achieve the goal of suppressing inrush current, increasing breakdown voltage and reliability. Effect
Pending Publication Date: 2022-07-12
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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[0004] In view of this, the present invention provides a preparation method of a gallium oxide Schottky diode and a gallium oxide Schottky diode, aiming at solving the problem of low reliability of gallium oxide Schottky diodes in the prior art
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[0043] In the following description, for the purpose of illustration rather than limitation, specific details such as specific system structures and technologies are set forth in order to provide a thorough understanding of the embodiments of the present invention. However, it will be apparent to those skilled in the art that the present invention may be practiced in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
[0044] Power electronic devices are mainly used for power changes and circuit control of power equipment, and are the core devices for power (power) processing. Silicon-based semiconductor devices are the most commonly used power devices in power systems at present, and their performance has been quite perfect and is close to the theoretical limit determined by its materi...
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Abstract
The invention provides a gallium oxide Schottky diode preparation method and a gallium oxide Schottky diode. The method comprises the following steps: epitaxially growing an n-type gallium oxide channel layer on the upper surface of a substrate; preparing a mask layer on the gallium oxide channel layer; etching the first preset region of the mask layer to expose the gallium oxide channel layer; in an oxygen atmosphere, performing annealing treatment on the exposed gallium oxide channel layer at a plurality of preset temperatures to obtain an oxide layer; preparing a first photoetching pattern on the oxide layer; growing a P-type dielectric layer on the first photoetching pattern, and removing the mask layer; the cathode electrode is prepared on the lower surface of the substrate, the anode electrode is prepared on the sides, away from the substrate, of the P-type dielectric layer and the gallium oxide channel layer, the gallium oxide Schottky diode is prepared through the method that thermal oxidation is conducted firstly and then the P-type dielectric is deposited, the stable P-type dielectric can be injected into the diode, the surge current of a high-power device is effectively restrained, and the reliability of the diode is improved. And the breakdown voltage and reliability of the device are improved.
Description
technical field [0001] The present application belongs to the technical field of semiconductor device manufacturing, and in particular, relates to a preparation method of a gallium oxide Schottky diode and a gallium oxide Schottky diode. Background technique [0002] Inrush current is an important reason that affects the performance and reliability of power semiconductor devices. [0003] In the prior art, silicon and silicon carbide Schottky diodes generally use ion implantation of P-type impurities to form an MPS structure (Merged PiN Schottky Diode) to suppress surge current and improve device performance and reliability. However, since gallium oxide Schottky diodes do not have stable P-type impurities, it is difficult to reduce inrush current and their reliability is low. SUMMARY OF THE INVENTION [0004] In view of this, the present invention provides a preparation method of a gallium oxide Schottky diode and a gallium oxide Schottky diode, aiming at solving the prob...
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IPC IPC(8): H01L21/329H01L29/06
CPCH01L29/66143H01L29/66212H01L29/0611
Inventor 王元刚敦少博吕元杰韩婷婷卜爱民许靖冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP