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Intelligent gate-level driver for silicon carbide power module

A power module and driver technology, applied in the direction of output power conversion devices, AC power input conversion to DC power output, instruments, etc., can solve the problems of not having intelligent active drive functions, etc., to improve maintenance efficiency and save Time and cost, the effect of ultra-low loss

Pending Publication Date: 2022-07-15
ANHUI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing power device drive circuit can realize the conduction and closure of the power switching device, only has limited temperature measurement, over-current protection, over-heat protection, only fixed soft-off function, fixed gate resistance, but does not have intelligent active source drive function

Method used

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  • Intelligent gate-level driver for silicon carbide power module
  • Intelligent gate-level driver for silicon carbide power module
  • Intelligent gate-level driver for silicon carbide power module

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Embodiment Construction

[0038] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0039] The present invention provides an intelligent gate-level driver for silicon carbide power modules, which is an intelligent gate-level driver based on an active gate level and realizes active control and health management design at the power module and sub-module levels.

[0040] The invention adopts intelligent gate-level drive, and integrates circuits such as front-end sensing, signal processing and active gate drive through close coupling with the silicon carbide module and its internal chip, and can adjust the performance, working conditions and aging of the module. While monitoring the whole life cycle, it also provides low-latency online processing for time-sensitive events. At the same time, through the silicon carbide gate-level control loop, it realizes active closed-loop feedback adjustment to the working characteristics of the s...

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Abstract

The invention discloses an intelligent gate-level driver for a silicon carbide power module, and belongs to the technical field of power electronics. The core of the intelligent digital gate driver for the silicon carbide power module is a gate-level driver based on a controlled voltage source, and the gate-level driver based on the controlled voltage source dynamically adjusts the switching performance of the power module according to different working states of the module. The purpose of accurate and programmable control of the dynamic and static performance of the silicon carbide power module is achieved, so that the switching performance and reliability of the silicon carbide power module are improved.

Description

[0001] The present invention claims the priority of the prior application ZL202110413616.1 (publication number CN113131725A, filing date on April 16, 2021). technical field [0002] The invention relates to the technical field of semiconductors, in particular to an intelligent gate-level driver for a silicon carbide power module. Background technique [0003] Electric vehicles are mainly divided into several components: battery, inverter, motor, electronic control unit (ECU). These play a very important role in the performance and safety and reliability of the vehicle. An electric vehicle is a vehicle in which an electric motor drives the vehicle forward. The basic working principle of electric vehicles is to provide current from batteries or other devices that can generate power or electrical energy, and through power electronic converters (DC-DC and DC-AC) to convert the low-voltage DC power supply at the output port of the battery into a motor that can drive the rotation...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H02M7/537G01R31/00G01R31/40G01R31/42
CPCH02M1/08H02M7/537G01R31/00G01R31/40G01R31/42Y02T10/40
Inventor 曹文平吉兵胡存刚
Owner ANHUI UNIVERSITY