Metal etching liquid and preparation method and etching method thereof

A metal etching and etching technology, which is applied in the field of touch control and display, can solve the problems of poor environmental protection and strong smell of aluminum etching solution, and achieve the effects of good environmental protection, stable etching performance and good etching effect

Active Publication Date: 2022-07-22
肇庆微纳芯材料科技有限公司
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] C. The aluminum etching solution of the triacid system has a strong smell and poor environmental protection

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal etching liquid and preparation method and etching method thereof
  • Metal etching liquid and preparation method and etching method thereof
  • Metal etching liquid and preparation method and etching method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0085] Correspondingly, the present application also provides a method for preparing the above-mentioned metal etching solution, which may include, for example, the following steps: mixing the components according to the proportions.

[0086] Preferably, during the mixing process, the dissolution can be accelerated by means of stirring or the like to form a uniform etching solution.

[0087] In addition, the present application also provides a method for etching a multi-layer metal containing molybdenum and aluminum, for example, the method may include the following steps: etching the multi-layer metal containing molybdenum and aluminum with the above-mentioned metal etching solution.

[0088] For example, the to-be-etched part of the multi-layer metal containing molybdenum and molybdenum can be placed in the above-mentioned metal etching solution for etching, which can effectively obtain the required etching morphology and has excellent etching performance.

[0089] Wherein, ...

Embodiment 1-8

[0095] Embodiments 1-8 correspondingly provide 8 kinds of metal etching solutions, and the preparation methods thereof are all the same, that is, by mixing oxidant, inorganic acid, organic acid, boron-containing compound, etching control agent, complexing agent, stabilizer and water in proportions. Stir and mix at 25°C for 30 minutes, and then filter through a 0.22 μm filter element.

[0096] The formula of the metal etching solution that embodiment 1-8 provides is as shown in table 1:

[0097] Table 1 formula composition

[0098]

[0099]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a metal etching solution and a preparation method and an etching method thereof, and belongs to the technical field of touch control and display. The metal etching liquid comprises the following components in percentage by mass: 3 to 15 percent of oxide, 10 to 40 percent of inorganic acid, 3 to 6 percent of organic acid, 0.05 to 0.2 percent of boron-containing compound, 0.02 to 0.5 percent of etching control agent, 0.5 to 3 percent of complexing agent, 0.01 to 0.1 percent of stabilizer and the balance of water. The metal etching liquid does not contain acetic acid and nitric acid, does not attack protective layer glue and is environment-friendly, multi-layer metal containing molybdenum and aluminum is etched through the metal etching liquid, etching morphology meeting requirements can be obtained, the etching rate, the slope angle and the key size loss of patterns can be effectively controlled, the etching effect is good, and the application prospect is wide.

Description

technical field [0001] The present invention relates to the technical field of touch control and display, and in particular, to a metal etching solution, a preparation method thereof, and an etching method. Background technique [0002] In flat panel display devices, aluminum films or molybdenum aluminum alloy films are mainly used as source / drain electrodes. At present, molybdenum aluminum etching solution is mainly composed of phosphoric acid, acetic acid and nitric acid. Phosphoric acid acts to decompose aluminum oxide Al. 2 O 3 Nitric acid acts as an oxidant, while acetic acid acts as a buffer to adjust the reaction rate. [0003] However, there are also some inherent problems in the use of the aluminum etching solution of the phosphoric acid triacid system, such as: [0004] A. Molybdenum-aluminum etching is usually carried out at a temperature of 40-50 °C, and the acid and acetic acid are volatilized at high temperature. It is necessary to replenish the new solution ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23F1/20C23F1/26
CPCC23F1/20C23F1/26
Inventor 李海涛何剑明
Owner 肇庆微纳芯材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap