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Preparation method of all-solution perovskite light-emitting diode

A light-emitting diode and perovskite technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of reducing the film quality of the perovskite light-emitting layer, deterioration of device efficiency, and erosion of the perovskite light-emitting layer. , to achieve the effect of good surface morphology, reduced erosion, and excellent transmission performance

Pending Publication Date: 2022-07-22
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional polar or non-polar solvents used will corrode the perovskite light-emitting layer, reduce the film quality of the perovskite light-emitting layer, and lead to deterioration of device efficiency.

Method used

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  • Preparation method of all-solution perovskite light-emitting diode
  • Preparation method of all-solution perovskite light-emitting diode
  • Preparation method of all-solution perovskite light-emitting diode

Examples

Experimental program
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Embodiment 1

[0031] In this example, see figure 1 , the preparation of a full solution perovskite light-emitting diode, comprising the following steps:

[0032] a. Preparation of electron transport layer PFN solution:

[0033] CB and DCM were mixed in a volume ratio of 3:7 as the solvent of the electron transport layer PFN, PFN was added to the above mixed solvent at a concentration of 4 mg / ml, and the above solution was stirred with a stirrer for 2 h, and then the pore size was 0.45. Filter through a μm polytetrafluoroethylene filter to obtain a uniformly mixed PFN solution for later use;

[0034] b. Preparation of hole transport layer solution:

[0035] Poly(9-vinylcarbazole) (PVK) and poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-alt -(9,9-Di-n-octylfluorenyl-2,7-diyl)](TFB) was weighed in a mass ratio of 2:8, and the total mass was 10mg and dissolved in 1mL of CB solvent , obtain the raw material mixed solution, use the stirrer to stir the raw material mixed solu...

Embodiment 2

[0049] This embodiment is basically the same as the first embodiment, and the special features are:

[0050] In this embodiment, the preparation of a full-solution perovskite light-emitting diode includes the following steps:

[0051] a. Preparation of electron transport layer PFN solution:

[0052] CB and DCM were mixed in a volume ratio of 7:3 as the solvent of the electron transport layer PFN, PFN was added to the above mixed solvent at a concentration of 4 mg / ml, and the above solution was stirred with a stirrer for 2 h, and then the pore size was 0.45. Filter through a μm polytetrafluoroethylene filter to obtain a uniformly mixed PFN solution for later use;

[0053] b. Preparation of hole transport layer solution:

[0054] Poly(9-vinylcarbazole) (PVK) and poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-alt -(9,9-Di-n-octylfluorenyl-2,7-diyl)](TFB) was weighed in a mass ratio of 8:2, and the total mass was 10mg and dissolved in 1mL of CB solvent , obta...

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Abstract

The invention discloses a preparation method of an all-solution perovskite light-emitting diode. The preparation method comprises the steps of preparation of an electron transport layer PFN solution, preparation of a hole transport layer solution, preparation of a perovskite precursor solution and preparation of a device structure of the all-solution perovskite light-emitting diode. A substrate, an anode, a hole transport layer, a perovskite light-emitting layer, an electron transport layer and a cathode are sequentially arranged from bottom to top to form a device structure of the perovskite light-emitting diode, the perovskite precursor solution prepared in the step c is taken and transferred to the hole transport layer, and the perovskite light-emitting layer is prepared. A mixed solvent of chlorobenzene (CB) and dichloromethane (DCM) is used as a solvent of an electron transport layer material poly [(9, 9-bis (3 '-(N, N-dimethylamino) propyl)-2, 7-fluorene)-2, 7-(9, 9-dioctylfluorene)], an electron transport layer which is smooth and compact and has good energy level matching is deposited, and a high-efficiency all-solution perovskite light-emitting diode is constructed.

Description

technical field [0001] The invention relates to the preparation of a perovskite light-emitting diode device, in particular to a preparation method of a full-solution perovskite light-emitting diode device, which is applied to the technical field of novel display device manufacturing. Background technique [0002] Metal halide perovskites, as a direct bandgap ionic semiconductor material, have excellent optoelectronic properties, including: high carrier mobility, high photoluminescence efficiency, narrow emission spectrum, and tunable light color At the same time, it also has the advantage of solution processing, and has a wide range of application prospects in the field of optoelectronic devices. In recent years, the device performance of perovskite light-emitting diodes (PeLEDs) has developed rapidly. The external quantum efficiencies (EQE) of green, red, and near-infrared PeLEDs have reached 23.4%, 21.3%, and 21.6%, respectively, which can be compared with commercializatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50
CPCH10K71/15H10K71/40H10K50/11H10K50/16H10K71/00Y02E10/549
Inventor 杨绪勇史星宇王林李文强孔令媚罗云袁豪
Owner SHANGHAI UNIV