Platinum film with high resistance temperature coefficient and preparation method thereof

Abstract

The invention relates to the technical field of film preparation, in particular to a platinum film with a high resistance temperature coefficient and a preparation method thereof. An oxygen-containing platinum thin film layer is deposited on an aluminum oxide substrate, the binding force between the platinum thin film and the aluminum oxide substrate is improved through the thermal decomposition, agglomeration and solid-state dehumidification processes of the oxygen-containing platinum thin film layer in the subsequent heat treatment process, meanwhile, isolated platinum mass points formed through thermal decomposition of the oxygen-containing platinum thin film serve as nucleation points, and the nucleation efficiency of the platinum thin film is improved. Recrystallization and grain growth of the subsequently deposited platinum film are promoted, and the platinum film with high resistance temperature coefficient and excellent high-temperature structural stability can be obtained after heat treatment. The prepared platinum film is high in resistance temperature coefficient, good in high-temperature structural stability and simple in structure and process, other metal layers or insulating layers do not need to be introduced to serve as adhesion layers or transition layers, the method is effective, economical and practical, and the prepared platinum film has wide application prospects in the field of high-temperature platinum film sensors.

Description

technical field [0001] The invention relates to a platinum film, in particular to a high temperature coefficient of resistance platinum film and a preparation method thereof. Background technique [0002] Platinum has good high temperature oxidation resistance and good resistance-temperature linear relationship in a wide temperature range, and has a wide range of applications in resistance temperature sensors, resistance bodies, heaters, electrodes, etc. Compared with the traditional wire-wound platinum resistance temperature sensor, the thin-film platinum resistance temperature sensor has the advantages of small size, fast response, low cost, and easy integration, and has gradually replaced the wire-wound platinum resistance temperature sensor. However, thin-film platinum resistance temperature sensors usually face problems such as low resistance temperature coefficient and poor high-temperature stability. Compared with other high-temperature temperature sensors such as the...

AI Technical Summary

Problems solved by technology

Among them, the scattering of electrons by the surface of the film and the interface with the substrate, and the scattering of electrons by defects such as impurities, grain boundaries, dislocations, and holes in the film will affect the temperature coefficient of resistance of the film, causing its temperature coefficient of resistance to decrease or Unstable, affecting the response performance of platinum thin film resistance temperature sensor

[0004] Although platinum has good stability, at high temperatures, platinum thin films often undergo serious agglomeration behavior, pinholes will appear in the thin film, and the pinholes that continue to grow will turn into holes, which will affect the response of platinum thin film resistance temperature sensors Performance, the pores continue to grow and even make the film completely rupture after contacting each other, resulting in the failure of the platinum thin film resistance temperature sensor

Images