Preparation method of two-dimensional bismuth antimonide with large thermoelectromotive force
A bismuth antimonide and electromotive force technology is applied in the field of preparation of two-dimensional bismuth antimonide with a large thermoelectric potential, which can solve the problems of low thermoelectric potential and hinder the application of two-dimensional bismuth antimonide, and achieves improved absolute value, good thermoelectric performance, The effect of reducing negative contributions
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Embodiment 1
[0032] The present invention has the preparation method of two-dimensional bismuth antimonide with large thermoelectric potential, and specifically comprises the following steps:
[0033] (1) Mix Bi particles and BiSb particles according to the Bi:Sb atomic ratio of 82:18, vacuum seal the tube, put the sealed quartz tube in a tube furnace for 5 hours at 600 °C, and then naturally cool to room temperature after the reaction get Bi 82 Sb 18 target;
[0034] (2) Electron beam evaporation on SiO 2 17nm Bi deposited on / Si substrate 82 Sb 18 , the chamber pressure of the electron beam evaporator is 6.5×10 -4 Pa, the substrate temperature is 100 °C, and the deposition rate is
[0035] (3) the film sample (Bi 82 Sb 18 ) was placed in a quartz tube furnace, argon gas was introduced as a carrier gas, the carrier gas flow was 100sccm, the pressure in the furnace was 100Pa, annealed at 250°C for 60min, and cooled to room temperature naturally after the heat preservation to obta...
Embodiment 2
[0038] The present invention has the preparation method of two-dimensional bismuth antimonide with large thermoelectric potential, and specifically comprises the following steps:
[0039] (1) Mix the Bi particles and BiSb particles according to the stoichiometric ratio, seal the tube in vacuum, put the sealed quartz tube into a tube furnace and keep it at 600 ° C for 5 hours, and then naturally cool to room temperature after the reaction to obtain Bi 82 Sb 18 target;
[0040] (2) Deposition of 17 nm Bi on Si substrate by electron beam evaporation 82 Sb 18 , the chamber pressure of the electron beam evaporator is 6.5×10 -4 Pa, the substrate temperature is 150°C, and the deposition rate is
[0041] (3) the film sample (Bi 82 Sb 18) was placed in a quartz tube furnace, argon gas was introduced as a carrier gas, the flow rate of the carrier gas was 100sccm, the pressure in the furnace was 100Pa, annealed at 270 ° C for 50min, after the insulation was completed, it was natu...
Embodiment 3
[0044] The present invention has the preparation method of two-dimensional bismuth antimonide with large thermoelectric potential, and specifically comprises the following steps:
[0045] (1) Mix the Bi particles and BiSb particles according to the stoichiometric ratio, seal the tube in vacuum, put the sealed quartz tube into a tube furnace and keep it at 600 ° C for 5 hours, and then naturally cool to room temperature after the reaction to obtain Bi 82 Sb 18 target;
[0046] (2) Electron beam evaporation on SiO 2 47nm Bi deposited on / Si substrate 82 Sb 18 , the chamber pressure of the electron beam evaporator is 6.5×10 -4 Pa, the substrate temperature is 25°C, and the deposition rate is
[0047] (3) the film sample (Bi 82 Sb 18 ) was placed in a quartz tube furnace, argon gas was introduced as a carrier gas, the flow rate of the carrier gas was 100sccm, the pressure in the furnace was 100Pa, annealed at 230 ° C for 80min, and naturally cooled to room temperature aft...
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Abstract
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