Dynamic programming-based InGaN/GaN multi-quantum well solar cell model parameter extraction method

Abstract

The invention belongs to the technical field of solar cells, and discloses a dynamic programming-based InGaN / GaN multi-quantum well solar cell model parameter extraction method, which comprises the following steps of S1, constructing an InGaN / GaN multi-quantum well solar cell model; s2, constructing an I-V characteristic curve expression of the model of the InGaN / GaN multi-quantum well solar cell; s3, constructing an equation set about the short-circuit current Isc, the peak current Im, the open-circuit voltage Voc and the peak voltage Vm; s4, defining a range of an ideal factor n of a series resistor Rs and a diode in the model, and grouping the series resistor Rs and the diode; and S5, on the basis of the step S4, solving values of five parameters of Rs, n, Iph, I0 and Rsh in the model. According to the method, parameter extraction can be carried out on the InGaN / GaN multi-quantum well solar cells with different In components, the filling factor error and the photoelectric conversion efficiency error are small, the curve fitting goodness is high, and the parameter extraction precision is high.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for extracting parameters of an InGaN / GaN multiple quantum well solar cell model based on dynamic programming. Background technique [0002] Gallium nitride (GaN), as a III-V nitride semiconductor material, has the advantages of large band gap, high electron mobility, high thermal conductivity, high hardness, stable chemical properties, low dielectric constant and strong radiation resistance. It has great potential for applications in microelectronics, optoelectronics and even space. [0003] In the GaN material system, the forbidden band width of InGaN materials and devices is continuously adjustable from 0.7eV to 3.4eV, and its band completely covers from the near-infrared spectral region to the ultraviolet spectral region, which perfectly matches the solar spectrum; at the same time, InGaN alloys also have high absorption coefficient, where the band-edge absorpti...

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Problems solved by technology

Therefore, in the process of using the above algorithm, it is easy to have the defects of premature convergence, long time consumption and large error precision, resulting in a steep trend of the I-V characteristic curve, resulting in difficult and inaccurate parameter extraction

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