Silicon carbide MOSFET drive circuit

Abstract

The invention relates to the technical field of silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) driving, and discloses a silicon carbide MOSFET driving circuit, which comprises a light-emitting circuit which is arranged for providing a The light sensing circuit comprises an output end and an input end, the light sensing circuit generates charging current when receiving the light emitted by the light emitting circuit, and the output end is configured to be electrically connected with the grid electrode of the silicon carbide MOSFET; the load current loop comprises a first connecting end and a second connecting end, the first connecting end is electrically connected with the source electrode of the silicon carbide MOSFET, and the second connecting end is electrically connected with the input end. In actual use, the circuit is simple in structure, the light emitting circuit and the light sensing circuit are arranged, and when the light emitting circuit emits light, the light sensing circuit can sense the light; the light sensing circuit generates charging current based on light generated by the light emitting circuit, the charging current is input into a grid electrode of the silicon carbide MOSFET for charging, so that the voltage of the grid electrode of the silicon carbide MOSFET is increased, and when the voltage difference between the grid electrode and a source electrode of the silicon carbide MOSFET is larger than the threshold voltage of the silicon carbide MOSFET, the silicon carbide MOSFET is switched on, so that switching-on and switching-off driving of the silicon carbide MOSFET is achieved.

Description

technical field [0001] The invention relates to the technical field of silicon carbide MOSFET driving, in particular to a silicon carbide MOSFET driving circuit. Background technique [0002] For MOSFETs based on Si substrates, the higher the withstand voltage, the greater the on-resistance per unit area. Therefore, high withstand voltage MOSFETs based on Si substrates have higher energy consumption and heat generation in actual use. Therefore, for the voltage field above 600V, IGBT (insulated gate bipolar transistor) is mainly used for switching control, and IGBT mainly reduces the on-resistance by injecting minority carrier holes into the drift layer, but at the same time due to The accumulation of minority carriers, the IGBT will generate a tail current when it is turned off, resulting in great switching losses. [0003] With the emergence of the third-generation semiconductor material silicon carbide, silicon carbide-based MOSFETs can operate at high frequencies where I...

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Problems solved by technology

However, the circuit structure using transformer isolation drive and capacitive isolation drive is complex, and the production and packaging process is difficult

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