Preparation method and application of silicon carbide

Abstract

The invention provides a preparation method and application of silicon carbide. The preparation method at least comprises the following steps: performing chlorination treatment on liquid organosilane; grafting the chlorinated organosilane with a photosensitive group to obtain a modified solution; irradiating the modified solution with ultraviolet light until the modified solution is cured and molded to obtain flaky organosilane; and heating the flaky organosilane to obtain the silicon carbide. The invention provides a preparation method of silicon carbide, which can effectively improve the quality of silicon carbide crystals.

Description

technical field [0001] The invention relates to the technical field of silicon carbide single crystal growth, in particular to a preparation method and application of silicon carbide. Background technique [0002] The morphology and quality of crystals grown by the physical vapor transport method are affected by the temperature uniformity of the seed crystal, the silicon-carbon ratio of the gas phase components, the flow rate of the transport gas and the impurity content of the raw materials. The flow rate and flow rate of the gas phase components The ratio of silicon to carbon is controlled by parameters such as the temperature gradient in the feedstock region, the magnitude of the temperature and the porosity of the feedstock. [0003] The purity, particle size and crystal form of silicon carbide raw materials play an important role in the growth of semiconductor silicon carbide single crystals, which directly affect the crystal quality and electrical properties of the gro...

AI Technical Summary

Problems solved by technology

The edge of the raw material is consumed, the carbon content on the outside is increasing, and the interior may become denser due to powder sintering or recrystallization of silicon carbide gas phase components, resulting in a decrease in the temperature of the internal raw material and an increase in the heat transfer resistance from the outside to the inside of the raw material.

The gas generated by the decomposition of raw materials in the middle will reduce the outward flow power and increase the flow resistance, which will interrupt the growth process, increase the cost of crystal growth, and easily cause defects such as crystal polymorphism, basal plane dislocation, and even cracks.

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