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Bidirectional switch with active substrate bias

A bidirectional switch and bias switch technology, applied in the field of semiconductor device manufacturing and integrated circuits

Pending Publication Date: 2022-08-09
GLOBALFOUNDRIES U S INC MALTA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, series connection requires each device to be rated at one-half the total switch resistance required

Method used

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  • Bidirectional switch with active substrate bias
  • Bidirectional switch with active substrate bias
  • Bidirectional switch with active substrate bias

Examples

Experimental program
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Effect test

Embodiment Construction

[0015] refer to figure 1 And in accordance with embodiments of the present invention, a layer stack 12 is formed on the substrate 10 . The substrate 10 may be a bulk substrate comprising a single crystal semiconductor material (eg, single crystal silicon). In one embodiment, the single crystal semiconductor material of substrate 10 may be single crystal silicon having a crystal orientation. In other embodiments, the substrate 10 may be composed of silicon carbide, sapphire, or gallium nitride.

[0016] Layer stack 12 may include buffer layer 14, channel layer 16, and barrier layer 18, each layer including one or more compound semiconductor layers. Layers 14 , 16 , 18 may be successively deposited using an epitaxial growth process such as metalorganic chemical vapor deposition, vapor phase epitaxy or molecular beam epitaxy to form a layer stack. A nucleation layer (not shown) may be provided between the layer stack 12 and the substrate 10 . Each of the layers 14, 16, 18 ma...

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PUM

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Abstract

The invention relates to a bidirectional switch with active substrate bias. Structures for bidirectional switches and methods of forming such structures are disclosed. A substrate contact is formed in a trench defined in the substrate. The substrate includes a trench and a substrate contact in the trench. A bidirectional switch on a substrate includes a first source / drain electrode, a second source / drain electrode, an extension region between the first source / drain electrode and the second source / drain electrode, and a gate structure. A substrate bias switch on the substrate includes a gate structure, a first source / drain electrode coupled to the first substrate contact, a second source / drain electrode coupled to the first source / drain electrode of the bidirectional switch, and an extension region laterally between the gate structure and the first source / drain electrode.

Description

technical field [0001] The present invention relates to semiconductor device fabrication and integrated circuits, and more particularly, to structures for bidirectional switches and methods of forming such structures. Background technique [0002] Bidirectional switches are used in AC-AC matrix converters, solar micro-inverters, battery management, and other power device applications. High-voltage power electronic devices found in bidirectional switches, such as high-electron-mobility transistors, can be fabricated using III-V compound semiconductors to take advantage of their material properties, such as carrier mobility ( carrier mobility) is greater than the carrier mobility of silicon, and has a higher critical electric field strength than silicon, so that it can achieve lower drain-to-source resistance and lower drain-to-source resistance. Smaller device size enables higher voltage operation. Group III-V compound semiconductors contain group III elements (aluminum, gal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/06H01L21/8252H03K17/56
CPCH01L27/0629H01L21/8252H03K17/56H01L29/2003H01L29/1066H01L29/7786H01L23/535H01L27/0605H01L27/085H01L21/76224H01L29/66462H01L29/405
Inventor 弗朗索瓦·赫伯特
Owner GLOBALFOUNDRIES U S INC MALTA