Process for preparing crystal film for components to emit blue light

A thin film and crystal technology, applied in the field of crystal thin film preparation, can solve the problem of not having luminescent properties, and achieve the effects of good crystal quality, good repeatability and stability

Inactive Publication Date: 2005-06-22
ZHEJIANG UNIV
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The films prepared by the first two methods are close to amorphous state; the Zn grown by the latter two methods 1-x Cd x O thin films are mostly multi-phase structures of ZnO, CdO and other phases, and even no alloy thin films are formed at all, and do not have luminescent properties

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for preparing crystal film for components to emit blue light

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The implementation method of the present invention will be further described below in combination with specific examples.

[0014] Put the substrate on the sample holder 5 of the reaction chamber after surface cleaning, and place the substrate facing down to effectively prevent the contamination of the substrate by granular impurities. The vacuum degree of the reaction chamber is pumped to 10 -3 Pa; use the heater to heat the substrate, and the substrate temperature is controlled at 450 ° C; the sputtering gas is high-purity Ar (99.99% or more) and high-purity O 2 (more than 99.99%), the two-way gas enters the buffer chamber 4 through the intake pipes 1 and 2, and is introduced into the vacuum chamber after being fully mixed in the buffer chamber. The pressure in the vacuum chamber is controlled by the automatic pressure controller 8, and the pressure is about 4Pa. The ratio of argon to oxygen is controlled at Ar:O 2 =1:4, this can be realized by the flow meter 3; with...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A Zn1-xCdxO crystal film used for the device emitting blue light is prepared by DC reaction type magnetically controlled sputter method. It features that the width of its forbidden band and the wavelength of the light emitted from it can be regulated by controlling the content of Cd. Its advantages are high crystal quality, fully preferential orientation, and high repeatability and stability.

Description

technical field [0001] The invention relates to a preparation method of a crystal thin film for a blue light-emitting device. Background technique [0002] ZnO is a hexagonal wurtzite structure, direct wide bandgap semiconductor, the bandgap at room temperature is 3.3eV, and its exciton binding energy is as high as 60meV. It has broad application prospects and market potential in ultraviolet and blue light emitting devices and detectors . However, in order to realize the application of ZnO-based optoelectronic functional devices, in addition to requiring good crystal quality, its energy band must be tunable. Since CdO itself cannot be used as a luminescent material, and the Zn content of CdO is too high 1-x Cd x O film, the defect carrier concentration in the film will be higher, even reaching 10 19 / cm 3 It is generally believed that it is not conducive to luminescence. At present, the alloying of ZnO and CdO is mainly reported as a research o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/35C30B25/06H01L33/00
Inventor 叶志镇马德伟黄靖云赵炳辉
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap