Crystal film for components to emit blue light and preparation thereof

Abstract

A Zn1-xCdxO crystal film used for the device emitting blue light is prepared by DC reaction type magnetically controlled sputter method. It features that the width of its forbidden band and the wavelength of the light emitted from it can be regulated by controlling the content of Cd. Its advantages are high crystal quality, fully preferential orientation, and high repeatability and stability.

Description

technical field [0001] The invention relates to a crystal thin film used for a blue light-emitting device and a preparation method thereof. Background technique [0002] ZnO is a hexagonal wurtzite structure, direct wide bandgap semiconductor, the bandgap at room temperature is 3.3eV, and its exciton binding energy is as high as 60meV. It has broad application prospects and market potential in ultraviolet and blue light emitting devices and detectors . However, in order to realize the application of ZnO-based optoelectronic functional devices, in addition to requiring good crystal quality, its energy band must be tunable. Since CdO itself cannot be used as a luminescent material, and the Zn content of CdO is too high 1-x Cd x O film, the defect carrier concentration in the film will be higher, even reaching 10 19 / cm 3 It is generally believed that it is not conducive to luminescence. At present, the alloying of ZnO and CdO is mainly reported as...

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Problems solved by technology

The films prepared by the first two methods are close to amorphous state; the Zn grown by the latter two methods 1-x Cd x O thin films are mostly multi-phase structures of ZnO, CdO and other phases, and even no alloy thin films are formed at all, and do not have luminescent properties

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