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Method of raising low-electric layer spreading capacity

A technology of low dielectric layer and etch stop layer, which is applied in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., and can solve the problems of inability to promote the coating ability of low dielectric materials, coating defects, etc.

Inactive Publication Date: 2005-09-07
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the baking step of the adsorption-promoting layer can facilitate the bonding with the underlying etch-stop layer, the dry surface of the adsorption-promoting layer after baking does not promote the coating ability of low-k materials.
[0008] When the coating capacity is at its limit, if the pre-wetting step is not used, there will be coating defects around the periphery of the wafer.

Method used

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  • Method of raising low-electric layer spreading capacity
  • Method of raising low-electric layer spreading capacity
  • Method of raising low-electric layer spreading capacity

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Embodiment Construction

[0020] Some embodiments of the present invention are described in detail as follows. However, the invention may be practiced broadly in other embodiments than those described in detail, and the scope of the invention is not limited thereto but rather by the patentable scope of the appended claims.

[0021] Each step described below is carried out in a coating reaction chamber (coating chamber), and the relative humidity (relative humidity) in the reaction chamber is about 30% to 60%, and the optimum condition is 35% to 45%, At the same time, the temperature range in the reaction chamber is 20°C to 30°C, and the optimum temperature range is 23°C to 27°C. refer to figure 1 , forming an etch stop layer 12 on the substrate 10, which is used as a layer to stop the etching position in the etching step. The material of the etch stop layer 12 can be an inorganic low dielectric material such as silicon nitride (SiN, silicon nitride) or silicon carbide (SiC, silicon carbide), and the ...

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Abstract

The method of raising low-dielectric layer spreading capacity includes: rotary spraying one each stopping layer on the substrate and rotary spraying one adsorption promoting layer on the etch stopping layer. In order to increase the spraying capacity between the etch stopping layer and the organic low-dielectric layer, the stoved adsorption promoting layer is pre-moistened. Thus, the spreading quality of the stoved adsorption promoting layer is improved and the spreading capacity between the etch stopping layer and the low-dielectric layer is increased.

Description

(1) Technical field [0001] The present invention relates to a method for increasing the coatability of a low dielectric layer. (2) Background technology [0002] In the application of semiconductor process technology, sub-micron and sub-half-micron integrated circuit (integrated circuit) elements are currently being manufactured. The trend toward deep sub-micron technology (eg, including dimensions smaller than 0.35 micron) is necessary for multilayer interconnect technology. [0003] Thus, in an integrated circuit chip, integrated circuit performance is measured as the delay time of electronic signals moving between millions of gates and transistors in the deep sub-micron. Parasitic capacitance (parasitic capacitance) and resistance effect (resistance effect) make the structure of these protective interconnection lines must be well controlled. In view of this trend, recent attention has been paid to the use of low-resistance metals (such as copper), which are connected wi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/312H01L21/768
CPCH01L21/76832H01L21/312H01L21/02282H01L21/02304H01L21/022H01L21/02118H01L21/02126
Inventor 谢宗棠蔡正原黄稚铵
Owner UNITED MICROELECTRONICS CORP