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Inert gas displacement method and device, exposure device and graticule sheet device

A technology of inert gas and reticle, which is applied in the direction of photolithography exposure device, transportation and packaging, microlithography exposure equipment, etc., can solve the problems of film deformation and damage, exposure light absorption, etc.

Inactive Publication Date: 2006-01-04
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0022] In addition, regarding the method of purifying the membrane space with an inert gas, in Japanese Patent Laid-Open No. 9-197652, it is disclosed that a plug is provided to inject gas into the membrane frame or the opening and the opening from which it is discharged are sealed. The technology that fills the space surrounded by the film frame, the film and the reticle; however, because the film has oxygen transmittance, when the reticle is kept in a space with a high oxygen concentration for a long time, due to the external Oxygen concentration difference, oxygen enters the film space, resulting in the problem of exposure light being absorbed
In addition, when sealing the film space, the film may be deformed and damaged due to changes in air pressure.

Method used

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  • Inert gas displacement method and device, exposure device and graticule sheet device
  • Inert gas displacement method and device, exposure device and graticule sheet device
  • Inert gas displacement method and device, exposure device and graticule sheet device

Examples

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no. 1 example

[0060] Figure 5 It is a schematic diagram showing a purification mechanism for purifying a thin film space with an inert gas according to the first embodiment of the present invention.

[0061] Figure 5 The middle sealed chamber 36 is equivalent to figure 1 The housing 8 of the reticle stand 1 or the temporary storage 18 of reticle is contained in the reticle, so the inert gas is introduced through the inert gas supply channel 34, and the inert gas is discharged through the inert gas outlet channel 35, so that the sealed chamber 36 passes The inert gas is purified.

[0062] From the viewpoint of maintaining the transmittance of exposure light, the concentration of oxygen and moisture in the sealed chamber 36 should be 1-100 ppm, preferably 10 ppm or less. However, since the sealed chamber 36 is equipped with unillustrated markings Since a space with a large capacity for actuators such as a sheet conveying device, it is difficult to control the concentration of oxygen and mois...

no. 2 example

[0081] In the above-mentioned first embodiment, the inert gas filled in the substantially closed space 39 is discharged from the inert gas discharge channel 41. A slight gap may also be provided between the reticle 23 and the reticle support table 28 to prevent Inert gas is discharged there. Reference Figure 9A (Cross-sectional view) The second embodiment of the present invention will be explained.

[0082] The inert gas is supplied to the reticle support table 28 from the inert gas supply channel 40. The supplied inert gas penetrates the substantially closed space 39 through the porous plate 28a. At this time, since the perforated plate 28a is passed, the inert gas is uniformly supplied into the substantially closed space 39.

[0083] The reticle support portion 29 of the reticle support table 28 supports three or four places of the reticle 23. Such as Figure 9B As shown in (side view), a small gap is provided outside the contact portion 47 with the reticle 23. Due to the press...

no. 3 example

[0086] In the above-mentioned first and second embodiments, the inert gas is supplied from an arbitrary place or underside in a relatively substantially closed space 39. However, it can also be supplied to the substantially closed space through the vicinity of the vent 27 of the film frame. Space 39. Reference Picture 10 The third embodiment of the present invention will be explained.

[0087] The inert gas is supplied from the inert gas supply passage 40 to the substantially closed space 39. At this time, since the inert gas is supplied from the vicinity of the vent hole 27 of the film frame, the oxygen and moisture that have moved from the film space through the vent hole 27 to the outside of the film space due to gas diffusion can be efficiently removed at the inert gas discharge port. Moreover, it is often possible to increase the concentration of the inert gas near the vent holes 27 of the membrane frame to efficiently purify the membrane space. Can also be like Picture 11 ...

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Abstract

The object of this invention is to provide a technique of effectively purging a space almost closed with a master and pellicle film with inert gas in an exposure apparatus which uses ultraviolet rays as exposure light, purges the interior of the apparatus with inert gas, and projects the pattern of a master onto a photosensitive substrate via a projection optical system. To achieve this object, a plurality of vent holes are formed in a structure obtained by surrounding by a surrounding member a gas purge space to be purged with inert gas. A vessel which forms a space around the structure is filled with inert gas to cause inert gas to enter the gas purge space, purging the gas purge space with inert gas.

Description

Technical field [0001] The present invention is applicable to an exposure device that uses ultraviolet light as exposure light, replaces the inside of the device with an inert gas, and irradiates a master pattern such as a mask onto a photosensitive substrate through a projection optical system, and relates to an exposure device installed to prevent adhesion of foreign matter on the surface of the pattern , The inert gas replacement method in the film space enclosed by the film and the base plate. It also relates to an exposure apparatus provided with an inert gas replacement device that replaces the inert gas in the thin film space. It also relates to a reticle storage warehouse using an inert gas replacement device, a reticle inspection device, a reticle transport box, and a manufacturing method of the device. Background technique [0002] In the existing manufacturing process of semiconductor elements composed of very small crystal lattices such as LSI (Large Scale Integrated ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F7/16G03F7/26B65G49/00G03F1/64G03F1/66H01L21/027H01L21/673
CPCG03F1/66G03F7/70933G03F7/70741H01L21/027
Inventor 加茂野隆
Owner CANON KK