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Positive photoresist composition

A technology of composition and photoresist, which is applied in the direction of optics, optomechanical equipment, photosensitive materials for optomechanical equipment, etc.

Inactive Publication Date: 2006-01-11
SUMITOMO CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The formation of such edge roundings causes serious problems in the production of semiconductor integrated circuits

Method used

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  • Positive photoresist composition
  • Positive photoresist composition
  • Positive photoresist composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] The components were mixed in the following composition, and filtered through a fluororesin filter having a pore size of 0.1 µm to form a photoresist solution.

[0057] Resin:

[0058] With reference to the resin prepared in the examples, 13.5 parts

[0059] Acid Generators:

[0060] Bis(cyclohexanesulfonyl)diazomethane, 0.42 parts

[0061] (4-Methylphenyl)diphenylsulfonium perfluorooctanesulfonate, 0.08 parts

[0062] Quencher: N-methyldicyclohexylamine, 0.012 parts

[0063] Additive: 1,3-dimethyl-2-imidazolinone, 1.0 parts

[0064] Solvent: Propylene Glycol Monomethyl Ether Acetate, 70 parts

[0065] On a silicon wafer washed in a conventional manner, the above photoresist solution was coated with a spin coater so that the film thickness after drying was 0.7 µm. The silicon wafer was then prebaked at 90°C for 60 seconds on a hot plate. The coated film was exposed through a chromium mask with a hole pattern and the exposure was varied stepwise using a KrF laser w...

Embodiment 2

[0070] A photoresist solution was prepared in the same manner as in Example 1 except that the composition of the photoresist was changed as follows. The product is evaluated in the same way. The results are also shown in Table 1.

[0071] Resin:

[0072] With reference to the resin prepared in the examples, 13.5 parts

[0073] Acid Generators:

[0074] Bis(cyclohexanesulfonyl)diazomethane, 0.4 parts

[0075] (4-Methylphenyl)diphenylsulfonium perfluorooctanesulfonate, 0.1 parts

[0076] Quencher: N-methyldicyclohexylamine, 0.008 parts

[0077] Tetrabutylamine hydroxide 0.004 part

[0078] Additive: 1,3-dimethyl-2-imidazolinone, 1.0 parts

[0079] Solvent: Propylene Glycol Monomethyl Ether Acetate, 70 parts

Embodiment 3

[0081] A photoresist solution was prepared in the same manner as in Example 1 except that the composition of the photoresist was changed as follows. The product is evaluated in the same way. The results are also shown in Table 1.

[0082] Resin:

[0083] With reference to the resin prepared in the examples, 13.5 parts

[0084] Acid Generators:

[0085] Bis(cyclohexanesulfonyl)diazomethane, 0.42 parts

[0086](4-Methylphenyl)diphenylsulfonium perfluorooctanesulfonate, 0.08 parts

[0087] Quencher: N-methyldicyclohexylamine, 0.012 parts

[0088] Additive: 5,5-Dimethylhydantoin, 0.5 parts

[0089] Solvent: Propylene Glycol Monomethyl Ether Acetate, 70 parts

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Abstract

A positive working photoresist composition is provided which comprises a resin which is converted to alkali-soluble from alkali-insoluble or alkali slightly soluble by the action of an acid; an acid generator; and a nitrogen-containing cyclic compound represented by the following formula (I): <CHEM> wherein X represents CH2 or C(=O), two of R<1>, R<2>, R<3> and R<4> represent a lower alkyl and the rest two represent hydrogen; gives a good profile with a smooth pattern side even on a substrate having a high reflection; and has a wide focus margin and a good sensitivity and resolution.

Description

technical field [0001] The present invention relates to a photoresist composition suitable for photolithography using high energy radiation, such as extreme ultraviolet light including lasers, electron beams, X-rays, radiation, and the like. Background technique [0002] Recently, with the development of high integration of integrated circuits, it is necessary to form submicron-order patterns. Based on this requirement, especially the ability to produce 64MDRAM and 256MDRAM, laser lithography has attracted special attention. As a photoresist suitable for this laser lithography, a photoresist called a chemically amplified type resist using an acid catalyst and chemical enhancement is used. In chemically amplified photoresist photoresists, the solubility of the irradiated portion in the alkaline developer is changed by the reaction of the acid catalyst generated from the acid generator of the irradiated portion, and thus a positive or negative graphics. [0003] In the chem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00G03F7/039G03F7/004G03F7/09
CPCG03F7/0045Y10S430/106G03F7/091G03F7/039
Inventor 八子由子竹山尚干
Owner SUMITOMO CHEM CO LTD
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