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Doping method and doping cone for manufacturing Czochralski silicon monocrystal

A technology of Czochralski silicon single crystal and funnel, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of difficult crystal growth, complex doping technology with large concentration and uniform doping, and achieve reduction in usage, The effect of reducing environmental pollution

Active Publication Date: 2006-12-13
金瑞泓科技(衢州)有限公司
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Problems solved by technology

In fact, crystal growth is very difficult when the concentration is close to the limit value. One of the difficulties is that the high-concentration uniform doping technology is more complicated

Method used

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  • Doping method and doping cone for manufacturing Czochralski silicon monocrystal
  • Doping method and doping cone for manufacturing Czochralski silicon monocrystal
  • Doping method and doping cone for manufacturing Czochralski silicon monocrystal

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Embodiment Construction

[0024] The doping funnel used for the manufacture of heavily doped Czochralski silicon single crystal has a funnel body 24, a funnel cover 23, a hook 22,

[0025] Use the doping method of doping funnel of the present invention, it is characterized in that its step is:

[0026] 1) All the polysilicon is loaded into the quartz crucible;

[0027] 2) Put the dopant into the Figure 4 In the doping funnel shown, cover the funnel cover, hang it under the seed crystal chuck, lift the doping funnel into the auxiliary chamber, cover the furnace cover, vacuumize, and change the material; after all the material is melted, lower it The doping funnel is doped into the hearth of the single crystal furnace. If antimony is doped, the doping funnel is lowered to a height of 10 to 20 mm from the nozzle of the lower part of the funnel to the molten silicon liquid level, so that the heated and melted antimony drops into the silicon melt. Absorbed; if phosphorus or arsenic is added, lower the fu...

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Abstract

A doping hopper for preparing the heavyly doped monosilicon by straight pulling up is composed of main body with bottom discharge spout, cover and hanging hook. Its doping method includes loading the doping agent in said hopper, fully smelting polysilicon, lowering the hopper until its discharge spout has a 10-20 mm distance from the surface of molten silicon for doping Sb, or until its discharge spout into the molten silicon by 5-10 mm depth for doping P or As, and doping. Its advantage is high doping efficiency (90-100%).

Description

technical field [0001] The invention relates to a doping method for heavy-doped Czochralski silicon single crystal production and a doping funnel thereof. Background technique [0002] Heavily doped Czochralski silicon single crystals are used to produce epitaxial substrates. Growing a high-resistivity epitaxial layer on a low-resistivity heavily doped substrate can solve the contradiction between the high breakdown voltage of bipolar transistors (requiring the use of high-resistivity silicon wafers) and low collector resistance, and can reduce bipolar transistors. The power consumption of the pole transistor is improved, and the response effect of its high-frequency signal is improved. Growing a high-resistivity silicon epitaxial layer on a low-resistivity heavily doped silicon substrate can also be used to solve the latch-up problem of CMOS components. [0003] Device manufacturing requires low substrate resistivity, but the concentration of dopa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/04C30B29/06
Inventor 田达晰马向阳赵松宏杨德仁李立本
Owner 金瑞泓科技(衢州)有限公司
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