Method for forming multiple wire connection by using photoresist layer

Abstract

This invention provides one multiple layer wire connection method by etching layer, which comprises the following steps: forming one etching terminal layer and the first light etching layer on the semi-conductor base with MOS elements; processing the etching step on the first light etching layer to form one first groove; depositing one first conductor layer on the first groove and processing first flattening; forming first bottom reflection layer and one second light etching layer on the conductor base; forming one second groove with the pattern process on the second light etching layer; depositing one second conductor layer on the second groove and processing one flattering process; final removing the first and second light etching layer to get one multiple-wire connection.

Description

technical field [0001] The invention relates to a method for forming multiple wire connections, in particular to a method for forming multiple wire connections by using a photoresist layer. Background technique [0002] With the rapid increase in the integration of semiconductor components, the surface of a chip with a size of only 2 square centimeters cannot provide enough area to make the required metal interconnection layer (interconnect). Therefore, the process design must develop the interconnection structure vertically upwards. Thus, a multi-level metallization interconnection structure is formed. An integrated circuit requires five layers of metal when the component size is 0.25 microns. Therefore, when the line width (linewidth) and pitch (pitch) shrink, the interconnection resistance and inter-line capacitance will also increase, resulting in the RC delay effect, resulting in a decrease in signal transmission speed and an increase in crosstalk noise. Large, increa...

AI Technical Summary

Problems solved by technology

Although the dielectric constant value of organic polymer materials is lower than that of inorganic polymer materials, it has great potential for development, but organic polymers encounter some problems in semiconductor processes, such as copper damascene process in removing photoresist and residues, However, it will cause damage to the organic dielectric layer, or copper ions may diffuse into the dielectric layer, causing leakage and reducing reliability.

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