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Method for reducing 4H-silicon carbide resistivity of oriented phosphorus ion filling (0001)

A phosphorus ion, silicon carbide technology, applied in chemical instruments and methods, circuits, electrical components, etc., can solve problems such as difficulty in process realization

Inactive Publication Date: 2007-07-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

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Problems solved by technology

High-temperature implantation puts forward higher requirements on the mask, and the annealing temperature of 1700 ° C is more difficult to realize in terms of process to prevent the evaporation of the surface layer of 4H-SiC

Method used

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  • Method for reducing 4H-silicon carbide resistivity of oriented phosphorus ion filling (0001)
  • Method for reducing 4H-silicon carbide resistivity of oriented phosphorus ion filling (0001)
  • Method for reducing 4H-silicon carbide resistivity of oriented phosphorus ion filling (0001)

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Embodiment

[0032] 1. Use the simulation program to select the implant parameters to ensure that the implanted phosphorus impurities are evenly distributed in the implanted layer. Phosphorus ion implantation dosage is 2.0×10 15 P + cm -2 For multiple implantation, the energies are 450, 280, 140, 50 keV, and the corresponding dose ratios are: 0.38, 0.26, 0.2, 0.16 (Figure 1).

[0033]2. Phosphorus ion implantation into 4H-SiC (0001) crystal plane. Phosphorus ion implantation rate is controlled at 1.0×10 12 P + cm -2 s -1 . The injection temperature is room temperature. The implantation angle deviates from the [0001] direction by 7 degrees to avoid the channeling effect of implanted ions.

[0034] 3. The injected sample is annealed at 1500°C for 15 minutes. Annealing is done under the protection of pure argon, the argon pressure is 1 standard atmosphere, and the flow rate is 3000sccm. In order to avoid preferential evaporation of silicon on the sample surface, 1sccm of SiH was introduced at the...

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Abstract

The method of reducing 4H-silicon carbide resistivity with phosphorus ion implantation in (0001) orientation includes the following steps: selecting phosphorus ion implantation parameter on 4H-silicon carbide by means of simulation program to form the homogeneous distribution of impurity in the implanted layer; implanting phosphorus ion to the (0001) crystal face of 4H-silicon carbide; and high temperature annealing of the implanted sample under the protection of pure argon. The present invention has controlled phosphorus ion implanting rate, reduced implantation damage, improved crystallization quality of annealed implanted layer, lowered resistivity of the implanted layer and flat and smooth sample surface without obvious surface Si evaporation.

Description

Technical field [0001] The present invention relates to a method for reducing the resistivity of phosphorous ion implantation into [0001]-oriented 4H-SiC (silicon carbide), and more specifically to a method for multiple implantation of phosphorous ions into [0001]-oriented 4H-SiC, A method of using a lower phosphorus ion implantation rate, and then annealing the implanted sample at a high temperature to obtain a low resistivity. It belongs to the field of semiconductor technology. Background technique [0002] Silicon carbide, as a representative of the third-generation semiconductor material, is particularly suitable for the production of high-temperature, high-power, high-frequency electronic devices due to its wide band gap, high breakdown electric field, high thermal conductivity and high saturated electron drift velocity characteristics. It has received more and more widespread attention and research. Selective doping is an indispensable technology for manufacturing semicond...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/425C30B31/22
Inventor 高欣孙国胜李晋闽王雷赵万顺
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI