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Growth GaN film on silicon substrate using hydride vapaur phase epitaxial method

A hydride vapor phase, epitaxy technology, applied in chemical instruments and methods, single crystal growth, crystal growth and other directions, can solve the problems of hindering GaN growth, damage, reducing the quality of thin film crystals, etc., to achieve the effect of easy corrosion

Inactive Publication Date: 2007-07-18
NANJING UNIV
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AI Technical Summary

Problems solved by technology

[0011] Si is nitrided to form Si 3 N 4 The powder and the HCl and silicon present in the reactor will react severely to form SiCl4, which will damage or even hinder the subsequent growth of GaN and reduce the crystal quality of the film

Method used

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  • Growth GaN film on silicon substrate using hydride vapaur phase epitaxial method
  • Growth GaN film on silicon substrate using hydride vapaur phase epitaxial method

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Embodiment Construction

[0021] The substrate surface metal In pre-deposition technology that the present invention adopts comprises the following steps:

[0022] 1. Cleaning and processing of Si(111) substrate.

[0023] 2. After the Si(111) substrate is placed in the reactor, the GaN buffer layer is now grown at a low temperature. The temperature ranges from 400-800° C., similar results are obtained under various temperature conditions, and the growth time is 40-90 seconds, such as a typical 60 seconds. Gas flow respectively: NH 3 The flow rate is 600 sccm, the ammonia carrier gas flow rate is 600 sccm, the HCl flow rate is 10 sccm, the HCl carrier gas flow rate is 20 sccm, and the total nitrogen gas flow rate is 3000 sccm. A GaN / Si sample with a low-temperature buffer layer was taken out.

[0024] 3. Raise the temperature to 1040-1080°C, put the GaN / Si sample with a low-temperature buffer layer into the growth area, keep the flow rate of each gas in step 2 constant, and continue to grow to the re...

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Abstract

The invention relates to growing the GaN film with high quality on the Si substrate through the hydrid gas phase epitaxial method and low temperature buffer layer technology. In the HVPE growth system or MOCVD system, we chooses the ammonia gas and HCl as the gas source at the relative low temperature of between 400deg.C ad 800deg.C on the Si substrate, grow the GaN and then continue it at the high temperature, such as between 1000deg.C and 1100deg.C. The GaN film grown at the low temperature prevents the nitridation of the ammonia gas to the Si substrate and the reaction between the Si and the HCl at high temperature and thus makes the later GaN have high quality.

Description

technical field [0001] The invention relates to a method and technology for growing a GaN thin film on a Si substrate by using a hydride vapor phase epitaxy method, especially a method for directly GaN thin film. Background technique [0002] Group III-V nitride materials, mainly GaN, InGaN, and AlGaN alloy materials, are new semiconductor materials that have attracted much attention in the world in recent years. [0003] The application of GaN-based semiconductor materials in the field of optoelectronics, such as LED and LD, is of great significance. At present, the total value of the world's high-brightness LED market is about 1.2 billion US dollars, and it is expected that by 2005, its market size will grow rapidly to 3 billion US dollars. In various high-frequency high-speed microwave millimeter wave semiconductor devices (such as FET, MODFET, HEMT And PHEMT and other applications also have broad prospects. [0004] The acquisition of GaN single crystal substrate is of...

Claims

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Application Information

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IPC IPC(8): H01L21/205C30B25/02C30B29/40
Inventor 张荣俞慧强陈琳修向前谢自力郑有炓顾书林沈波江若琏施毅韩平朱顺明胡立群
Owner NANJING UNIV