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Process for pressure purification of silicon trichlorohydrgen and apparatus thereof

A technology of trichlorosilane and a purification method, which is applied in the directions of halogenated silanes, halogenated silicon compounds, etc., can solve the problems of unreasonable technical parameters of trichlorosilane purification process, high operation and maintenance costs, and high energy consumption, and achieves Reduce equipment investment and equipment operating costs, the effect of high pressure and high temperature

Active Publication Date: 2007-08-08
CHINA ENFI ENG CO LTD
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Problems solved by technology

[0003] The purpose of the present invention is to provide a pressurized purification method and device for trichlorosilane, which solves the problems of unreasonable technical parameters, high energy consumption, high operating and maintenance costs, and high investment in the existing trichlorosilane purification process

Method used

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  • Process for pressure purification of silicon trichlorohydrgen and apparatus thereof

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Embodiment Construction

[0021] Embodiment Referring to Fig. 1, the distillation kettle 1 adopts a shell-and-tube heat exchanger suitable for distillation operation conditions, the operating pressure range of the equipment: 0.15Mpa-1.5Mpa, and the operating temperature range: 70-200°C. Heat the still 1 with heat medium such as steam, hot water or heat conduction oil to vaporize the distilled trichlorosilane and silicon tetrachloride liquids, and the vaporized steam enters the purification 2 through the connecting pipe 4 .

[0022] The inside of the purification tower 2 is a sieve plate structure, and the operating pressure range of the equipment is 0.15Mpa-1.5Mpa; the operating temperature range is 40-150°C. SiHCl from still 1 3 、SiCl 4 The mixed steam is exchanged and separated between heat and components on the sieve plates at all levels of the purification tower, and the components with low boiling points (SiHCl 3 ) is enriched in the vapor phase, components with high boiling points (SiCl 4 ) is...

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Abstract

A process and apparatus for pressure purifying of trichlorosilane is disclosed. Said process includes such steps as distilling the mixed liquid of trichlorosilane, SiCl4 and chlorosilane at 70-200 deg.C under 0.15-1.5 MPa, sending the vapor derived from distilled into purifying tower for the exchange and separation of heat and components at 40-150 deg.C, enriching the low-boiling-point trichlorosilane in vapor phase and the high-boiling-point SiCl4 in liquid phase, evaporating and condensaing several times to obtain trichlorosilane vapor, and condensing to obtain liquid-phase trichlorosilane.

Description

(1) Technical field [0001] The invention relates to a method for purifying chemical materials and its equipment, in particular to a method for purifying trichlorosilane and its device. (two), background technology [0002] Polysilicon is the raw material for the production of computer chips and semiconductor devices, and is known as "the cornerstone of the microelectronics building", while trichlorosilane (SiHcl 3 ) purification technology is one of the key technologies for polysilicon production. The existing trichlorosilane purification process consists of a distillation kettle, a purification tower and a tower top condenser connected in sequence, which is a high energy-consuming process, and energy consumption accounts for a large proportion of the total cost. With the depletion of the world's oil resources, the price of energy has risen sharply, and the production cost of this process has also increased greatly. transfer. German Siemens Company adopts atmospheric pres...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/08C01B33/107
Inventor 沈祖祥严大洲汤传斌肖荣晖
Owner CHINA ENFI ENG CO LTD
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