Gas distribution apparatus for semiconductor processing

A technology for gas distribution and gas treatment, which is applied in the field of reaction chambers and can solve problems such as difficulty in uniform distribution of processing gases

Inactive Publication Date: 2002-09-04
LAM RES CORP
View PDF29 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] According to the foregoing, it can be seen that as the size of the semiconductor substrate increases, it becomes more difficult to achieve a uniform distribution of processing gases on the substrate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gas distribution apparatus for semiconductor processing
  • Gas distribution apparatus for semiconductor processing
  • Gas distribution apparatus for semiconductor processing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Detailed description of the preferred embodiment

[0022] For a better understanding of the invention, the following detailed description refers to the accompanying drawings, in which there is shown and described a preferred exemplary embodiment of the invention. Furthermore, the reference numerals used to identify key elements of the invention in the figures are consistent throughout the figures.

[0023] In accordance with the present invention, process gases can be uniformly distributed from one or more gas sources to a substrate located beneath a shower head. The present shower head can be used in any type of semiconductor processing equipment where it is desired to distribute process gases over a semiconductor substrate. Such equipment includes CVD systems, polishing equipment, capacitively coupled plasma reactors, inductively coupled plasma reactors, ECR reactors, and the like.

[0024] The gas distribution system for a parallel plate plasma reactor is shown in ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A gas distribution system for semiconductor processing that includes a contoured surface to achieve the desired gas distribution on the backside of a shower head. The system may include one or more openings towards the air source between the baffle and the temperature-controlled support member. The baffles can have non-uniform thickness and geometrically controlled openings to achieve the desired gas distribution. In one arrangement the baffle is tapered, with holes of uniform diameter extending at different distances across the baffle to achieve uniform gas pressure through the outlets in the flat bottom surface of the baffle. In another arrangement, the holes have a diameter that gradually increases away from the centrally located gas source outlet. The shape of the baffles and / or the configuration of the holes can be designed to achieve the desired air pressure distribution.

Description

field of invention [0001] This invention relates to reaction chambers for processing semiconductor substrates, such as integrated circuit wafers, and in particular to improvements in gas distribution systems for use in these reaction chambers. Background of the invention [0002] Semiconductor processing includes deposition processes like chemical vapor deposition (CVD) of metal, dielectric, and semiconductor materials, etching of these layers, polishing of photoresist mask layers, and the like. In the case of etching, plasma etching is commonly used to etch metal, dielectric and semiconductor materials. A parallel-plate plasma reactor typically includes a gas chamber containing one or more baffles, a showerhead electrode through which etching gas is passed, a support for supporting the silicon wafer on the bottom electrode, an RF power supply, and Gas injection source for supplying gas to the gas chamber. The gas is ionized by the electrodes to form a plasma. The plasma ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/285H01L21/00H01L21/205H01L21/302H01L21/768
CPCH01L21/67017H01L21/3065
Inventor 郝芳莉(音译)拉金德尔·丁德萨
Owner LAM RES CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap