Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
An additive, selected technology for use in chemical instruments and methods, grinding/polishing equipment, polishing compositions containing abrasives, etc., to address pitting, undesirable effects, oxide corrosion, and via metal issues
Inactive Publication Date: 2002-09-18
CABOT MICROELECTRONICS CORP
View PDF14 Cites 19 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
Although metal and barrier metal removal rates are usually removed with a single system, the combination of via metal and tantalum and similar materials using a conventional polishing system can cause undesirable effects such as oxide corrosion and via metal pitting
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0043] The following examples further illustrate the invention, but it is obvious that they do not limit the scope of the invention in any way.
Embodiment 4
[0046] Wafer of Example 4.
[0047] The test wafer removal rate was determined by directly measuring the thickness of each test wafer before and after polishing using a Tencor(R) SurfscanUV 1050 machine with a Tencor RS-75.
[0048] Unless otherwise specified, ammonium hydroxide (NH 4 OH) All but one of the following examples (ie, Example 7) were adjusted to the target pH.
Embodiment 1
[0050] This example demonstrates that the rate of polishing of the first metal layer achievable by the system of the present invention is related to the presence and characteristics of polishing additives in the system.
[0051] Respectively with 2% by weight of alumina (especially Cabot's Semi-Sperse® W-A355 product), 1% by weight of oxidizing agent (especially H 2 o 2 ), 2.2% by weight polishing additive (particularly aminotris(methylene phosphonic acid) (i.e. Dequest® 2000 product)), or 0M, 0.037M or 0.33M ammonia (0% by weight NH 3 , about 0.06 wt% NH 3 with about 0.56 wt% NH 3 ) and 0.08% by weight of film formers (especially triazoles) in three different polishing systems (referred to as systems 1A-1C) to polish copper wafers, wherein HNO 3 or KOH to adjust the pH of each system to 8.5.
[0052] As a comparison, also with 2% by weight of alumina (especially Cabot's Semi-SperseW-A355 product), % by weight of oxidizing agent (especially H 2 o 2 ), 0.33M ammonia (ie a...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Property
Measurement
Unit
thickness
aaaaa
aaaaa
Login to view more
Abstract
The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, wherein the polishing additive is selected from the group consisting of pyrophosphates, condensed phosphates, phosphonic acids and salts thereof, amines, amino alcohols, amides, imines, imino acids, nitriles, nitros, thiols, thioesters, thioethers, carbothiolic acids, carbothionic acids, thiocarboxylic acids, thiosalicylic acids, hydroxylates, carbonylates, carboxylates, and acids thereof, and mixtures thereof, (iv) at least one stopping compound, and (v) a polishing pad and / or an abrasive. The invention also provides a method of polishing a substrate comprising contacting a surface of a substrate with the system and polishing at least a portion of the substrate therewith. Moreover, the invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (a) contacting the first metal layer with the system, and (b) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.
Description
field of invention [0001] The invention relates to a polishing system and a method for polishing a substrate, in particular to a method for polishing a multilayer substrate including a first metal layer and a second layer. Background of the invention [0002] Integrated circuits are fabricated from millions of active devices formed in or on a substrate such as a silicon wafer. The active devices are chemically and physically connected to a substrate and interconnected through the use of multilayer connection layers to form functional circuits. A typical multilayer interconnect includes a first metal layer, an intervening dielectric layer, and sometimes third and subsequent metal layers. Using interlayer dielectrics such as doped and undoped silicon dioxide (SiO 2 ) and / or low-k dielectrics to electrically isolate different metal layers. [0003] Metal vias are used to achieve electrical connections between different interconnect layers. For example...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to view more