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Polishing composition for metal CMP

A technology of polishing composition and mixture, which is applied in the direction of polishing composition, polishing composition containing abrasive, composition for inhibiting chemical change, etc., and can solve problems such as difficult polishing and removal

Inactive Publication Date: 2003-08-13
CABOT MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Ta and TaN are very chemically inert and mechanically hard, so they are difficult to remove by polishing

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] This example evaluates the ability of various polishing compositions to polish tantalum layers without affecting the roughness of previously polished copper portions. This slurry uses a CMP slurry comprising 6 weight percent fumed silica with a surface area of ​​90 m 2 / gram. The pH of the slurry was maintained at 11 under all tests. The different ingredients were added to the base slurry as listed in Table 1 below. Silquest A1524 is ureidopropyltrimethoxysilane manufactured for CKWITCO Corporation. Each slurry was used to polish the Cu layer on the wafer. The polished copper surface roughness (a measure of defectivity) was determined using atomic force microscopy.

[0043] Cu wafers were polished using an IPEC 472 polishing tool using an IC1000 / SUBAIV pad stack made by Rodel. The weights were polished using 3 lbs per square inch aluminum Γ55 rpm turret speed, 30 rpm spindle speed, and 200 ml / min slurry flow rate. The polishing results are reported in Table 1 belo...

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PUM

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Abstract

Chemical mechanical polishing compositions and slurries comprising a film forming agent and at least one silane compound wherein the compositions are useful for polishing substrate features such as copper, tantalum, and tantalum nitride features.

Description

technical field [0001] The present invention relates to an aqueous chemical mechanical polishing composition and slurry that can be used to polish substrates that include metallic features such as copper and tantalum features. The aqueous polishing composition includes a film former and at least one silane composition. In one method, the polishing composition of the present invention is used by applying the composition to an abrasive pad or combining the composition with one or more abrasives to form a polishing slurry, after which the pad or slurry is used to polish A substrate for one or more metal features. Background technique [0002] Integrated circuits are composed of millions of active devices formed in or on a silicon substrate. The active devices - originally isolated from each other - are interconnected to form functional circuits and components. The devices are interconnected using multilayer interconnects. The interconnect structure generally has a first met...

Claims

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Application Information

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IPC IPC(8): B24B37/00C09G1/02C09K3/14C09K13/04C09K15/20C23F3/00H01L21/304H01L21/306H01L21/321
CPCC23F3/00C09G1/02C09K3/1463H01L21/3212
Inventor 王淑敏史蒂文·K·格鲁比恩克里斯托弗·C·斯特赖恩兹埃里克·W·G·霍格伦
Owner CABOT MICROELECTRONICS CORP
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