Polishing composition for metal CMP

A technology of polishing composition and mixture, which is applied in the direction of polishing composition, polishing composition containing abrasive, composition for inhibiting chemical change, etc., and can solve problems such as difficult polishing and removal
CN1436225AInactive Publication Date: 2003-08-13CABOT MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
CABOT MICROELECTRONICS CORP
Publication Date
2003-08-13
Estimated Expiration
Not applicable · inactive patent
Patent Text Reader

Abstract

Chemical mechanical polishing compositions and slurries comprising a film forming agent and at least one silane compound wherein the compositions are useful for polishing substrate features such as copper, tantalum, and tantalum nitride features.
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Description

technical field

[0001] The present invention relates to an aqueous chemical mechanical polishing composition and slurry that can be used to polish substrates that include metallic features such as copper and tantalum features. The aqueous polishing composition includes a film former and at least one silane composition. In one method, the polishing composition of the present invention is used by applying the composition to an abrasive pad or combining the composition with one or more abrasives to form a polishing slurry, after which the pad or slurry is used to polish A substrate for one or more metal features. Background technique

[0002] Integrated circuits are composed of millions of active devices formed in or on a silicon substrate. The active devices - originally isolated from each other - are interconnected to form functional circuits and components. The devices are interconnected using multilayer interconnects. The interconnect structure generally has a first met...

Claims

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