Electric liquid processing device

A plasma treatment, plasma technology, used in circuits, discharge tubes, electrical components, etc.

Inactive Publication Date: 2003-10-01
ADVANCED LCD TECH DEVMENT CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to perform plasma treatment on a large area using a gas containing oxygen, hydrogen, and chlorine that easily generates negative ions as a raw material, especially when the pressure is high.

Method used

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  • Electric liquid processing device
  • Electric liquid processing device
  • Electric liquid processing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Fig. 1(a) is a plan view of the plasma processing apparatus of the first embodiment, and Fig. 1(b) is a cross-sectional view thereof.

[0064] Reference numeral 1 is a rectangular waveguide, 2 is a waveguide antenna, 3 is an electromagnetic wave such as a microwave source, 4 is an electromagnetic wave radiation window (electromagnetic wave introduction window) composed of a dielectric such as quartz, glass, and ceramics, and 5 is a Vacuum container, 6 is a gas introduction system, 7 is a gas discharge system, 8 is a substrate subjected to plasma treatment, 9 is a substrate mounting part, 10 is a dielectric sandwiched between the waveguide antenna 2 and the electromagnetic wave radiation window 4 The bulk space (for example, air) 11 is a concave-convex portion (concave-convex surface) provided on the surface of the waveguide 1 facing the electromagnetic wave radiation window 4 .

[0065] A gas introduction system 6 for introducing a source gas and a gas discharge system ...

Embodiment 2

[0075] Fig. 2(a) is a plan view of the plasma processing apparatus of the second embodiment, and Fig. 2(b) is a cross-sectional view thereof.

[0076] Reference numeral 12 denotes a concavo-convex portion provided on the surface of the electromagnetic wave radiation window 4 facing the waveguide 1 .

[0077] In the second embodiment, on the surface of the electromagnetic wave radiation window 4 facing the waveguide 1 , elongated convex portions with a width of 10 mm and a depth of 5 mm are provided at intervals of 30 mm, thereby forming the concave-convex portion 12 .

[0078] The convex portion of the concave-convex portion 12 of the electromagnetic wave radiation window 4 is provided at a distance of 5 mm from the outer surface of the waveguide 1 on which the waveguide antenna 2 is provided. Furthermore, the surface of the electromagnetic wave radiation window 4 in contact with the plasma on the side opposite to the surface provided with the concave-convex portion 12 (that i...

Embodiment 3

[0084] Fig. 3(a) is a plan view of the electromagnetic wave radiation window in the plasma processing apparatus of the third embodiment, and Fig. 3(b) is a cross-sectional view thereof.

[0085] Reference numeral 13 is a glass plate constituting the electromagnetic wave radiation window 4 , and 14 is a mixing member made of spherical ceramics mixed with the glass plate 13 .

[0086] In Example 3, a glass plate (dielectric constant 4.7) 13 mixed with a mixing member 14 made of ceramics such as alumina (dielectric constant 9) is used as the electromagnetic wave radiation window 4 .

[0087] In addition, the diameter of the mixing member 14 made of spherical ceramics is 2.5 cm, and the thickness of the electromagnetic wave radiation window 4 is 5 cm. The diameter of the spherical mixing member 14 is larger than 1 / 8 of the wavelength of the microwave. Therefore, microwaves can be effectively dispersed due to reflection or scattering. As mentioned above, by using the electromagne...

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Abstract

The present invention provides a plasma processing apparatus capable of processing large-area substrates or angular substrates even with reactive plasma. The plasma processing device of the present invention has a rectangular waveguide 1, a waveguide antenna 2 formed by a slit arranged on the H surface of the waveguide 1, an electromagnetic wave radiation window 4 formed of a dielectric, and The dielectric space 10 sandwiched between the waveguide antenna 2 and the electromagnetic wave radiation window 4 generates plasma by virtue of the electromagnetic wave radiated from the waveguide antenna 2 through the electromagnetic wave radiation window 4, and the electromagnetic wave radiates between the waveguide 1 and the electromagnetic wave radiation space 10. Concave-convex portions 11 are provided on the facing surface of the window 4 .

Description

technical field [0001] The present invention relates to a plasma treatment device, in particular to a plasma treatment device for film deposition, surface modification, or etching on large angular substrates. Background technique [0002] In the conventional manufacturing processes of semiconductor devices or liquid crystal display devices, etc., when plasma processing such as film deposition, surface modification, or etching is to be performed, a parallel plate high-frequency plasma processing device or an electron cyclotron resonance (Electron Cyclotron Resonance) device is used. CyclotronResonance: ECR) plasma treatment device, etc. [0003] However, due to the low plasma density and high electron temperature of the parallel plate type plasma processing device, and in the ECR plasma processing device, a DC magnetic field is required when the plasma is excited, so there are problems that it is not easy to process a large area. [0004] On the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/511C23C16/00C23F1/00C23F4/00H01J37/32H01L21/205H01L21/30H01L21/302H01L21/3065H05H1/00H05H1/30H05H1/46
CPCC23C16/511H01J37/32192H01J37/32238H05H1/30
Inventor 后藤真志中田行彦
Owner ADVANCED LCD TECH DEVMENT CENT
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