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Fine preparation process for high-purity nitrogen trifluoride gas

A refining method, nitrogen trifluoride technology, applied in the direction of fluoride preparation, nitrogen and non-metallic compounds, electrolytic components, etc., can solve the high difficulty of gas impurities, equipment processing, process realization difficulty and high refining cost, unfavorable gas industrialization Production and other issues

Inactive Publication Date: 2003-10-22
PERIC SPECIAL GASES CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] due to CF 4 Boiling point of gas and NF 3 The boiling points of the gases only differ by 1°C, and their other physical and chemical properties are also very similar. 3 CF in gas 4 Gas impurities are very difficult, which will inevitably increase the production of high-purity NF 3 Difficulty and production cost of gas
Especially when raw material NF 3 CF in gas 4 When the content of gas impurities is high (higher than 500ppm), the preparation of high-purity NF 3 Gas equipment processing, process realization difficulty and refining cost are very high, the produced high-purity NF 3 Gases are also less profitable, not conducive to high-purity NF 3 Industrial production of gases

Method used

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  • Fine preparation process for high-purity nitrogen trifluoride gas
  • Fine preparation process for high-purity nitrogen trifluoride gas

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Embodiment Construction

[0039] The following is a detailed description of a specific embodiment of the present invention.

[0040] Process method of the present invention is:

[0041] The first step is to remove H in the feed gas in the HF removal tower 2 O, HF and other impurities. Feed gas adopts 97% crude product NF shown in Table 1 3 Gas, the temperature of the HF removal tower is controlled at -90°C, the pressure is 0.4MPa, and the residence time of the raw material gas in the tower is 20 minutes.

[0042] components

[0043] The second step is to remove N in the feed gas in the pyrolysis tower x f y , F x o y . The high-temperature cracking tower is filled with NaF sheets, and the internal temperature is controlled at 200°C, the pressure is controlled at 0.39MPa, and the residence time of the raw material gas in the tower is 20 minutes.

[0044] The third step is to remove N in the raw gas in the oxidation tower 2 O impurity. Oxidation tower filled with Na 2 o 2 , the temp...

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Abstract

The present invention relates to a method for refining high-purity NF gas by using crude product NF3 gas as raw material gas produced by electrolysis using NF4F-xHF as electrolyte system, and said method includes the following steps: A. removing impurities of H2O and HF from raw material gas in HF-removing tower; B. removing NxFy and FxOy from raw material gas in high-temp. cracking tower; C. removing N2O impurity from raw material gas in oxidation tower; D. removing oxidation substances produced in above-mentioned high-temp. cracking and oxidation steps of B and C in reduction tower; E. removing acidic substances from raw material gas in alkali-washing tower; F. removing water from raw material gas in low-temp. dewatering tower; G rectifying in rectifying tower.

Description

(1) Technical field [0001] The invention relates to a process for preparing high-purity nitrogen trifluoride gas, which is suitable for using NH 4 F-xHF (or add a small amount of KF) is the crude NF produced by electrolysis of the electrolyte system 3 The gas is the raw material gas, which is further refined and purified to obtain high-purity NF 3 gas. Through the method of the present invention, the crude product NF with a purity of more than 97% can be 3 The gas is purified to more than 99.99%, this high-purity NF 3 The gas can be directly used in the microelectronics manufacturing industry as an etchant and cleaning agent in high-density integrated circuits. (two), background technology [0002] NF 3 Gases are widely used in fields such as high-energy lasers, semiconductor technology, and chemical vapor deposition, and have good application prospects. But as an electron gas, it is NF 3 The purity of the gas has higher requirements. Generally, its purity should not ...

Claims

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Application Information

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IPC IPC(8): C01B9/08C01B21/083C25B1/24
Inventor 石兴涛高世选袁晓燕
Owner PERIC SPECIAL GASES CO LTD
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