Semiconductor device and capacitance measuring method

Abstract

The invention provides a semiconductor device with the measurement accuracy of capacity or a method for measuring the capacity. A CBCM measurement device comprises PMIS transistors 11, 12, NMIS transistors 13, 14, a first conductor 15 for reference connected to a first node N1, a second conductor 17 for reference forming a dummy capacitor between the first conductor 15 for reference and itself, a first conductor for a test connected to a second node, and a second conductor 18 for the test forming a test capacitor between the first conductor for the test and itself. The capacity of a target capacitor in the test capacitor is measured from a current flowing in the first and the second nodes by controlling the ON-OFF action of each transistor with control voltages V1, V2. The measurement accuracy of the capacity is improved by increasing dummy capacity.

Description

technical field [0001] The present invention relates to a semiconductor device having a function of generally measuring wiring capacitance, gate capacitance, and junction capacitance. Background technique [0002] In recent years, along with densification of semiconductor devices, the ratio of circuit delay to wiring length based on wiring capacitance has increased, and at the same time, variations in parameters defining wiring have increased due to inconsistencies in process manufacturing conditions and the like. As a result, the problem of increased inconsistency in circuit delay between semiconductor devices becomes prominent, and monitoring of inconsistency in wiring capacitance becomes important. [0003] However, in conventional measurement of wiring capacitance using an LCR meter, a large-area TEG pattern is required to maintain measurement accuracy, so it is difficult to monitor the inconsistency of wiring capacitance in a product chip. [0004] Therefore, the CBCM ...

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Problems solved by technology

[0053] (2) Questions about the monitoring of wiring capacitance

[0060] like Figure 27 As shown, as components of the wiring capacitance, in addition to the inter-wiring capacitance C1 in the same wiring layer, there is also the capacitance Cv between other wiring layers. However, in the conventional wiring pattern, it is not easy to separate the components of these wiring capacitances.

[0061] (3) Questions about the measurement of input and output capacitances of standard cells

[0065] (4) Questions about monitoring of gate length inconsistency

[0067] In the CBCM method, if the measurement frequency f is increased, the proportion of the gate leakage in the measurement current will be relatively reduced. Figure 22 For the gate control signal shown, there is an upper limit in the measurement frequency f

In addition, the measurement device itself can operate at a frequency of several 10MHz to 100MHz, but the resonance frequency in the measurement system (especially the coaxial signal line) is around several MHz, so if the tolerance is considered, the measurement frequency, 1MHz becomes the limit , it is difficult to remove the effect of gate leakage from the measured value of capacitance

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