Surface emtiting semiconductor laser device
A surface-emitting, semiconductor technology, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems that do not meet the aforementioned requirements of the light source of the multimode fiber, low impedance, and do not realize the small beam divergence angle, etc.
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no. 1 example
[0042] Figure 1A is a cross-sectional view of an oxidation-limited VCSEL according to a first embodiment of the present invention, Figure 1B is the floor plan of the VCSEL, Figure 1C It is a perspective view where the internal structure can be seen. Specifically, Figure 1A is along Figure 1B A cross-sectional view taken along the line X1-X1 shown. exist Figure 1C In , some structural elements are omitted for simplicity.
[0043] The surface-emitting semiconductor laser includes an n-type GaAs substrate 1, an n-type lower multilayer reflective layer 2 as a reflector, an undoped active region 3, a p-type AlAs layer 4, and a p-type upper multilayer as another reflector Reflective layer 5, p-type contact layer 6, interlayer insulating film 8, p-type upper electrode 9, n-type back electrode 10, light-emitting region 11, and light confinement region 12, which also serves as a current constriction region.
[0044] The stacking of these layers forms a cylinder (table or col...
no. 2 example
[0062] A surface emitting semiconductor laser device according to a second embodiment of the present invention will be described. In the above-described first embodiment of the present invention, the upper electrode 9 formed on the surface of the upper multilayer reflective layer 5 and used for lateral mode control is utilized as the electrode through which current is supplied to the device. In contrast, according to the second embodiment of the present invention, the electrodes for supplying injection current to the device are provided separately from the upper metal layer, so the upper metal layer is only used for lateral mode control. Also, an n-side electrode is provided on the front surface of the substrate 1 instead of an n-side rear surface electrode on the back surface of the substrate 1 . In the following description, the same reference numerals are used for the same parts as those explained above.
[0063] Figure 2A is a cross-sectional view of a VCSEL according t...
no. 3 example
[0068] will refer to the attached Figure 3A , 3B and 3C illustrate a VCSEL according to a third embodiment of the present invention. Figure 3A is the cross-sectional view of the VCSEL, Figure 3B is its floor plan, Figure 3C The relationship between pores in the layer is illustrated. This embodiment corresponds to a modification of the first embodiment, the difference being the pillar or stacked structure on the substrate. In particular, a protective film for protecting the surface of the contact layer 6 and supporting lateral mode control is provided. The other parts of the third embodiment are identical to the corresponding parts of the first embodiment and are designated by the same reference numerals as before.
[0069] The protective film 7 is made of a dielectric material and is arranged on the contact layer 6 of the pillar structure. The protective film 7 has a circular shape, the center of which is preferably aligned with the center of the hole defined by the l...
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