Metal organic compound vapor deposition device for the growth of zinc oxide semiconductor film

Abstract

The metal organic compound vapor deposition apparatus for growing zinc oxide semiconductor film includes growing chamber, sampling chamber, movable gate connecting the growing chamber and the sampling chamber, and atom generator for activating and cracking nitrogen source gas with gas outlet pipe set inside the growing chamber. The growing structure is one double-layer wall water cooling structure and provided with motor driven horizontal sample rack, sample heater, oxygen source inlet pipe, zinc source inlet pipe and exhaust port. During operation, cleaned substrate is fed via the sampling chamber into the growing chamber, the sample growing plane is fixed onto the rack, different reaction gases are input to grow crystal film of different performance. In the same time, nitrogen atom obtained through activating and cracking nitrogen source gas is fed to the growing chamber to obtain high quality n-type and p-type ZnO semiconductor crystal film.

Description

technical field [0001] The invention relates to metal organic compound vapor phase deposition (MOCVD) equipment, in particular to a metal organic compound vapor phase deposition equipment suitable for growing zinc oxide (ZnO) semiconductor film materials. Background technique [0002] As an important wide-bandgap semiconductor material, ZnO thin film has great application prospects in the field of optoelectronics. However, in order to realize the application of ZnO-based devices, it is necessary to grow high-quality ZnO crystal thin films with controllable carrier concentrations of n and p types. The growth methods of ZnO thin films include molecular beam epitaxy, magnetron sputtering, laser pulse deposition and sol-gel methods. The MOCVD technology is an important compound semiconductor epitaxial growth technology, which can realize accurate real-time doping of the epitaxial layer, the cost is moderate, and it can be used in industrial production....

AI Technical Summary

Problems solved by technology

Due to the serious gas phase reaction in the traditional MOCVD device to form particles during the growth of ZnO, which reduces the quality of the crystal film, and it is difficult to obtain an effective p-type doping source, there is basically no solution to grow high-quality ZnO by MOCVD. ZnO Crystal Thin Films and Realization of Its P-Type Transition

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