Preparation of low-resistance / high-resistance composite film through ultrasonic spray pyrolysis
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A technology of ultrasonic spray pyrolysis and composite thin film, which is applied in the field of new optoelectronic materials and can solve the problems of small deposition area, high investment and low deposition rate
Inactive Publication Date: 2004-11-10
SICHUAN UNIV
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These methods all have the disadvantages of high investment, low deposition rate, and small deposit
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[0018] Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0019] The transparent conductive film is prepared by ultrasonic spray pyrolysis film forming technology.
[0020] First, the metal salt (such as SnCl 4 .5H 2 O) be contained in liquid, and liquid is deionized water, a small amount of hydrochloric acid, ethanol, then adds ammonium fluoride and hydrofluoric acid. The deposition temperature is 340-520° C., and the deposition rate is approximately 10-300 nm / sec. By adjusting the deposition temperature, flow rate of carrying gas, fluorine content, tin salt concentration and deposition time, transparent SnO with a sheet resistance of 4.7Ω can be deposited. 2 conductive film. The metal tin salt is changed to metal zinc salt, and aluminum chloride is added to the reaction liquid to deposit ZnO:Al transparent conductive film. Similarly, this method can be used to prepare CdO, ITO, CdSnO 4 and Zn 2 SnO ...
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Abstract
The invention prepares transparent low-distance and high-distance films by ultrasonic spray thermolysis technique. It uses a technique of ultrasonic spray deposition, and has the characters of large area and high deposition ratio. By improving the film forming device by ultrasonic spray thermolysis, it changes the spout from one point to one slot, which makes gas uniformly ejected on a line. The sample moves at uniform speed in the direction of the vertical spraying slot so that the thickness of the deposited film can be made uniform and consistent. It can be used in preparation of the transparent low-resistance films and transparent intrinsic high-resistance films of solar energy batteries and LCDs.
Description
A technical field [0001] The invention belongs to the field of novel optoelectronic materials. Two background technology [0002] Transparent Conducting Oxide (TCO) is an important material for preparing devices such as solar cells and liquid crystal displays. The resistivity of TCO film is generally required to be lower than 10 -3 Ω.cm, visible light transmittance greater than 85%. Some metals, such as Au, Ag, Pt, Cu, Rh, Pd, Al, and Cr, are transparent to visible light when the thickness is less than 15nm, and have been used in transparent conductive films. However, the metal film has low hardness, poor stability, and strong metallic luster, so it is not an ideal transparent conductive film. [0003] At present, as transparent conductive film materials, metal oxides are the most researched and used, and the typical ones are SnO. 2 :F, ZnO:Al, CdO, In 2 o 3 、CdIn 2 o 4 、Cd 2 SnO 4 , Zn 2 SnO 4 and In 2 o 3 :Sn(ITO), etc. [0004] In II-VI group polycrystallin...
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