Micropattern forming material and fine structure forming method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- RENESAS TECH CORP
- Publication Date
- 2004-12-29
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The present invention relates to a fine pattern forming material and a method for forming a fine structure. Background technique
[0002] In recent years, along with the increase in the degree of integration of semiconductor devices, the size of each element has been miniaturized, and the width of wirings, gate electrodes, etc. constituting each element has also been miniaturized. Generally, after forming a desired resist pattern using photolithography, fine patterns are formed by etching various thin films of the substrate using the resist pattern as a mask. For this reason, photolithography is very important in forming fine patterns.
[0003] Photolithography consists of the processes of resist coating, mask alignment, exposure and development. However, in recent cutting-edge devices, the pattern size is approaching the limit resolution of photoexposure, so development of exposure technology with higher resolution is required.
[0004] As a conven...