Chemically mechanical polishing solution

A chemical machinery, polishing liquid technology, applied in polishing compositions containing abrasives, etc., can solve the problems of large average particle size of secondary particles, monodispersity, poor dispersibility, etc., to achieve narrow particle size distribution, small polishing damage, high flatness effect

Inactive Publication Date: 2005-06-01
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
View PDF1 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problems of agglomeration and sedimentation of abrasives in the existing polishing liquid, the average particle size of the secondary particles is large, the dispersion is poor, it is easy to cause scratches on the surface, and it is difficult to achieve global planarization of the polishing surface. The purpose of the present invention is to provide an abrasive particle Monodisperse, small average particle size, uniform distribution, chemical mechanical polishing fluid for global planarization of VLSI multilayer insulating films with little damage to the polished surface

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemically mechanical polishing solution
  • Chemically mechanical polishing solution
  • Chemically mechanical polishing solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Embodiment 1 (preparation of 100 grams of polishing liquid)

[0027] Take 30 grams of spherical nano-mesoporous SiO 2 Powder, the average particle size is 70nm, add 0.8 grams of 1,2-propylene glycol surface treatment agent, 8 grams of polyoxypropylene polyoxyethylene block polyether as a dispersion stabilizer, under the stirring and dispersion of 3000rpm, add high-purity 56 grams of ionized water were stirred and dispersed for 1.5 hours, and 5.2 grams of ethanolamine (also surface treatment agent and pH regulator) were added dropwise to adjust the pH value to 10, and the stirring was continued for 1 hour to obtain 100 grams of the polishing solution of the present invention.

[0028] Among them: spherical nano-mesoporous SiO 2 The powder is prepared as follows:

[0029] Dissolve 6.0g of cetyltrimethylammonium bromide and 10.56g of F127 (PEO-PPO-PEO, average molecular weight 11000) in 600g of ammonia solution (36.96g of ammonia water), heat at 35°C for 5 minutes, and w...

Embodiment 2

[0035] The difference from Example 1 is:

[0036] Using 10 grams of mesoporous SiO with a particle size of 30 nm 2The powder is abrasive, add 1 gram of polyvinyl alcohol as a dispersion stabilizer, add 79 grams of high-purity deionized water, add 9.2 grams of ethanolamine dropwise to adjust PH=10, and the SiO in the final polishing solution 2 The percentage content is 10%.

Embodiment 3

[0038] The difference from Example 1 is:

[0039] Mesoporous SiO 2 The particle size of the powder is 120nm, add 10 grams of 1,2-propylene glycol surface treatment agent, add the dispersion stabilizer of 5 grams of polyoxypropylene polyoxyethylene block type polyether, adopt 4 grams of triethanolamine as the pH regulator, adjust PH=12, add 51 grams of high-purity deionized water, the results are as follows: the average particle size is 120nm, and the average removal rate of the silicon dioxide layer is 3700 Å / min.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Mesopore diameteraaaaaaaaaa
The average particle sizeaaaaaaaaaa
Login to view more

Abstract

The present invention belongs to the field of chemical and mechanical polishing technology in microelectronic processing, and is especially chemical and mechanical polishing fluid for multilayer insulating film in superlarge scale integrated circuit manufacture. The polishing fluid has nanometer spherical mesoporous powder as grinding material and contains nanometer spherical mesoporous powder as grinding material, stabilizer, surfactant, pH regulator to regulate pH to 8.5-12.5, and high purity deionized water. The present invention utilizes the grinding material with rich surface hydroxy groups and excellent dispersivity in water in polishing interlayer medium of integrated circuit, and has no submicron scratches, high levelness, easy cleaning and high polishing rate.

Description

technical field [0001] The invention belongs to the chemical mechanical polishing technology in the field of microelectronic processing, and in particular relates to a chemical mechanical polishing liquid for global planarization processing of multi-layer insulating films in the ultra-large scale integrated circuit manufacturing process. Background technique [0002] With the rapid development of microelectronics technology, the degree of integration of electronic devices is getting higher and higher. The current VLSI chip set has reached billions of components, and the feature size has entered the nanoscale. This requires microelectronics Nearly a hundred processes in the processing technology, especially the interlayer insulating dielectric and multilayer wiring must be globally planarized, and chemical mechanical polishing (CMP) is the best global planarization method that has been proven. SiO 2 Water-based solution is currently the most representative polishing solution...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09G1/02
Inventor 张劲松梁艳张军旗
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap