Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Laser irradiation apparatus, laser irradiation method, and method for manufacturing crystalline semiconductor film

A technology of laser irradiation and manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, lighting devices, semiconductor devices, etc. question

Inactive Publication Date: 2010-12-22
SEMICON ENERGY LAB CO LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reason for the non-uniform crystallinity of the semiconductor film is that the semiconductor film cannot be irradiated uniformly with laser light.
On the other hand, forming a semiconductor element with a semiconductor film having a different crystallinity will cause a difference in the characteristics of the semiconductor element, so that the characteristics of the semiconductor element will be uneven in the substrate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laser irradiation apparatus, laser irradiation method, and method for manufacturing crystalline semiconductor film
  • Laser irradiation apparatus, laser irradiation method, and method for manufacturing crystalline semiconductor film
  • Laser irradiation apparatus, laser irradiation method, and method for manufacturing crystalline semiconductor film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0157] This example will refer to figure 1 Examples of the present invention will be described.

[0158] 101 denotes a laser oscillator for pulse oscillation, which is a laser oscillator capable of oscillating laser light with a pulse width of picosecond level or less. Any laser can be used for the laser oscillator of the present invention as long as it can oscillate an extremely short-pulse laser beam of 10 psec or less. For example, excimer lasers, Ar lasers, Kr lasers, CO 2 Laser, YAG laser, Y 2 o 3 Laser, YVO 4 Laser, YLF laser, YAlO 3 Laser, GdVo 4 Lasers, ceramic lasers, glass lasers, ruby ​​lasers, alexandrite lasers, Ti:sapphire lasers, copper vapor lasers, or gold vapor lasers, etc.

[0159] This example uses 2W YVO 4 laser. The laser oscillator incorporates a nonlinear optical element, and emits laser light with a wavelength of 532nm at the second harmonic of the laser light, which has a high absorption rate for the amorphous silicon film. It is desirable t...

Embodiment 2

[0174] This example will refer to image 3 An example of a laser irradiation device including a laser oscillator 201 that oscillates laser light with a pulse width of picosecond level or below; an electric mirror 204 driven in one direction; an fθ lens 205 is described. ; The stage 208 and the mobile robot 209 moving in one direction.

[0175] A laser beam output from a laser oscillator 201 is converted into a second harmonic wave by a nonlinear optical element 202 and shaped into an arbitrary shape by an optical system 203 . In this embodiment, the configuration of the optical system 203 is such that the shape of the beam spot on the irradiation surface is formed into a line shape. Thereafter, the semiconductor film 207 formed on the glass substrate 206 is scanned with a linear laser beam (X1 direction) using the galvanic mirror 204 and the fθ lens 205 . Note that, in the case of using a linear beam, laser irradiation can be efficiently performed if the minor axis direction...

Embodiment 3

[0180] This example will refer to Figure 4 Another embodiment mode of the present invention will be described. In this embodiment, an example will be described in which laser crystallization is performed only on a position where a TFT is formed in an amorphous semiconductor film formed on a substrate.

[0181] The laser oscillator 401 is a laser oscillator capable of oscillating a laser beam of an extremely short pulse at or below the picosecond level. A laser beam with a pulse width of 10 psec, a wavelength of 532 nm, an output power source of 8 W, a repetition frequency of 80 MHz, and a beam diameter of 0.6 mm was oscillated from this oscillator. The oscillated laser beam is shaped into an arbitrary shape by the optical system 402 . In this embodiment, the beam shape on the semiconductor film 408 formed on the substrate 407 on the irradiation surface is shaped by using a lenticular lens acting only in the uniaxial direction so that the beam shape becomes 300 μm in the maj...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
frequencyaaaaaaaaaa
widthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

It is an object of the present invention to provide a compact laser irradiation apparatus and a laser irradiation method that use a galvanometer mirror and an f[theta] lens, that suppress the interference caused by a secondary beam reflected on the rear surface of the substrate, that can perform homogeneous laser annealing to the irradiated object, and that increase throughput. In the present invention, the laser beam has a pulse width t that satisfies an inequality ct<2nd where c is a speed of light in vacuum, n is the refractive index of a substrate with the processing object formed thereon, and d is the thickness of the substrate. With the above structure, even when the galvanometer mirror and the f[theta] lens are used, it is possible to decrease the effect of the interference due to the secondary beam reflected on the rear surface of the substrate and to perform homogeneous laser annealing to the processing object.

Description

technical field [0001] The invention relates to a laser irradiation device, a laser irradiation method, and a method for manufacturing a crystalline semiconductor film, in particular to a laser irradiation device and a laser irradiation device using an optical system including an electric mirror (also known as a galvanometer mirror, Galvanometer Mirror) and an fθ lens. An irradiation method and a method for producing a crystalline semiconductor film. Background technique [0002] In laser irradiation equipment, an optical system using a galvanic mirror and an fθ lens is used as one of the methods for scanning the object to be irradiated with a laser beam emitted from a laser oscillator. [0003] By oscillating the galvanic mirror to change the incident angle of the laser beam incident on the galvanic mirror, the position irradiated by the reflected laser beam can be moved, and scanning can be performed in one direction by using a single galvanic mirror. If scanning in the X...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02B27/00H01L21/00B23K26/08H01L21/324G02F1/37B23K26/06B23K26/00H01L21/20H01L21/268H01L21/336H01L29/786H01L51/50H05B33/10H05B44/00
CPCB23K26/0853B23K26/0648B23K26/063B23K26/0807H01L21/2026B23K26/0639B23K26/0665B23K26/064B23K26/082B23K26/0622H01L21/02532H01L21/02686H01L21/02683H01L21/02672H01L21/02422H01L21/324
Inventor 田中幸一郎
Owner SEMICON ENERGY LAB CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com