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Electrodes for RRAM memory cells

A technology of memory cells and anti-oxidation layers, applied in the field of thin film resistance memory devices, can solve the problems of inappropriate manufacturing of submicron and large memory devices, low reliability, low cost efficiency, etc.

Active Publication Date: 2005-07-20
异基因开发有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] There are currently no commercially available RRAM devices, however, experimental devices using Pt, Au, Ag, Al, Ti, and TiN electrodes have been developed
Pt, An, and Ag electrode devices have good staying power, however, electrodes formed from these materials cannot be etched using conventional integrated circuit etching processes
Experimental devices are fabricated using shallow mask or chemical mechanical polishing (CMP) processes, which are neither suitable nor cost effective for fabrication of submicron and large memory devices
while other electrode materials used in experimental devices showed low reliability and low endurance

Method used

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  • Electrodes for RRAM memory cells
  • Electrodes for RRAM memory cells
  • Electrodes for RRAM memory cells

Examples

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Embodiment Construction

[0012] Experimental data demonstrates that during programming, the resistivity of the RRAM material near the cathode transitions to a high-resistivity state, while near the anode transitions to a low-resistivity state. The transition in resistivity occurs at the instant a narrow voltage pulse is applied to the device, which causes a voltage drop near the cathode. The change in resistivity requires a clear onset voltage. Experiments also found that the material requires a certain oxygen content, because when the oxygen content is too low, there is no change in resistivity.

[0013] If the electrode of the RRAM memory cell does not have oxidation resistance, the electrode will be oxidized during temperature treatment in the manufacturing process, or gradually oxidized by heat generated by current-voltage during normal operation. As the electrode oxidizes, oxygen diffuses from the RRAM material into the electrode, resulting in oxygen-deficient regions. Both oxidized electrodes ...

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Abstract

A RRAM memory cell is formed on a silicon substrate (12) having a operative junction therein and a metal plug (16) formed thereon, includes a first oxidation resistive layer (20); a first refractory metal layer (22); a CMR layer (24); a second refractory metal layer (26); and a second oxidation resistive layer (28). A method of fabricating a multi-layer electrode RRAM memory cell includes preparing a silicon substrate; forming a junction in the substrate taken from the group of junctions consisting of N+ junctions and P+ junctions; depositing a metal plug on the junction; depositing a first oxidation resistant layer on the metal plug; depositing a first refractory metal layer on the first oxidation resistant layer; depositing a CMR layer on the first refractory metal layer; depositing a second refractory metal layer on the CMR layer; depositing a second oxidation resistant layer on the second refractory metal layer; and completing the RRAM memory cell.

Description

technical field [0001] The present invention relates to a thin-film resistive memory device for a nonvolatile memory array, and more particularly to multilayer electrodes of an RRAM memory cell. Background technique [0002] There are currently no commercially available RRAM devices, however, experimental devices using Pt, Au, Ag, Al, Ti, and TiN electrodes have been developed. Pt, An, and Ag electrode devices have good staying power, however, electrodes formed from these materials cannot be etched using conventional integrated circuit etching processes. Experimental devices are fabricated by using shallow mask or chemical mechanical polishing (CMP) processes, which are neither suitable nor cost effective for the fabrication of submicron and large memory devices. While other electrode materials used in experimental devices showed low reliability and low endurance. In Apllied Physics Letters in May 2000, Vol.76, #19, p2749-2751 published "Electrical-pulse-induced reversible...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28G11C13/00G11C16/02H01L21/8246H01L27/105H01L27/108H01L27/115H01L27/22H01L29/68H01L39/00H01L43/08H01L45/00
CPCH01L45/1675G11C2213/31H01L45/1253G11C13/0007H01L45/145G11C2213/77H10N70/20H10N70/841H10N70/826H10N70/8836H10N70/063
Inventor 许胜籐潘威张风燕庄维佛李延凯
Owner 异基因开发有限责任公司
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