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Method for blocking hole in organic layer of organic semiconductor device

A technology of organic semiconductor and organic layer, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., to achieve the effect of improving luminous efficiency, simple and easy process, and low cost

Inactive Publication Date: 2005-07-27
FUDAN UNIV
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  • Summary
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In fact, the effect of completely blocking holes at any specified position in an organic semiconductor (through a thin region near the specified position and aluminum doping with an appropriate concentration), and the study of improving the luminous efficiency of the device has not been reported so far.

Method used

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  • Method for blocking hole in organic layer of organic semiconductor device
  • Method for blocking hole in organic layer of organic semiconductor device
  • Method for blocking hole in organic layer of organic semiconductor device

Examples

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example 1

[0016] Example 1: In order to study the hole blocking effect of Al doping in the hole transport layer, the present invention performs aluminum doping on three thin regions of the hole transport layer at three different positions, the central 6nm, and the 6nm regions on both sides, such as figure 2 As shown, all three aluminum-doped devices have no electroluminescence, and the normal light-emitting device without aluminum doping is also shown in the figure for comparison. The device with aluminum doping in the hole transport layer has no electroluminescence, indicating that the aluminum doping in the thin region of the hole transport layer successfully blocks the transport of holes, especially the device with two aluminum doped regions far away from the light emitting region. , there is no metal involved in the quenching effect of luminescent excitons at all, and the non-luminescence can only be due to the complete blocking effect of holes.

example 2

[0017] Example 2: This example illustrates the effect of aluminum doping of the Alq layer on the hole blocking effect, and different concentrations of Al doping are carried out in the 8nm range Alq region close to the hole transport layer, such as image 3 As shown, the results of the three doped devices do not have any electroluminescence, and the undoped devices that emit light normally are also shown in the figure. There are two possibilities that cause the three doped devices to not emit light. One is that the holes are successfully blocked by the Al-doped region of Alq and cannot move to the adjacent undoped Alq region to recombine with electrons to emit light. The second is that Alq It cannot prevent holes from moving to the undoped region to recombine with electrons to form excitons, but the adjacent metal region completely quenches the luminescent excitons (1, 2), causing the device to not emit light. In order to test the latter possibility, the present invention has p...

example 3

[0018] Example 3: The present invention applies the effect of Al doping in organic semiconductors to block holes, and applies it to organic electroluminescent devices with Al as the cathode. By effectively blocking holes in the light-emitting region, the probability of recombination with electrons is increased. , which improves the luminous efficiency of the device. Because the electroluminescent device with aluminum as the cathode is less efficient than the electroluminescent device with the smaller work function of lithium as the cathode, it is due to the lithium cathode device with the smaller work function that the injection of electrons is more effective, so that there is enough The electrons from the anode recombine with the holes injected from the anode to emit light in the light-emitting region, while the device with aluminum with a large work function as the cathode, due to the low electron injection efficiency, makes a considerable part of the holes not recombine with...

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Abstract

The method is: at the thin area (1-10nm) of organic semiconductor, the aluminum-doping is made; the dopant concentration is that mol ratio of aluminum to organic molecule is 0.1: 1-10:1. Due to aluminum-doping, the luminescence of device can be detected by detecting if the hole is entirely blocked. The organic electroluminescence derives from electron-hole combination at luminescent area. After a thin area at one side of hole transport region in the outside of luminescent area is made aluminum-doping, the device doesn't appear electroluminescence. That explains the holes are entirely blocked in the aluminum-doped area. The method can be used in NPB and ALq semiconductor materials.

Description

technical field [0001] The invention relates to the field of organic light-emitting devices, in particular to a method for blocking holes in an organic layer of an organic semiconductor device. Background technique [0002] At present, research on devices based on organic semiconductor materials is in the ascendant, ranging from organic solar cells in the field of energy, to organic electroluminescent devices in the field of information display and imaging, and to various functionalities related to modern microelectronics that imitate traditional inorganic semiconductors. Components and devices (except for the electrical injection of organic semiconductor laser diodes have not been realized) have been fully demonstrated, reflecting the strong development momentum and huge application potential of organic semiconductors. Many properties of all these functional devices based on organic semiconductors are directly related to and determined by the transport process of two charge...

Claims

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Application Information

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IPC IPC(8): H01L51/40H05B33/10
Inventor 侯晓远王子君丁训民
Owner FUDAN UNIV
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