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Technique for quick sintering ceramics in (Ta2O5)1-x(TiO2)x system

A rapid sintering and system technology, applied in the field of preparation of 1-xx system dielectric ceramics, can solve the problems of long preparation cycle, long time, and long time, and achieve the effects of shortening the preparation cycle, reducing energy consumption and improving efficiency

Inactive Publication Date: 2005-10-26
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current research work still has the following problems: one, people such as Cava (Ta 2 o 5 ) 1-x (TiO 2 ) x The preparation process of system ceramics has the following problems: 1. The pre-firing temperature is too high (1350°C) and the time is too long (several days and nights); the sintering temperature is relatively high (1400°C) and the time is too long (generally 24 hours); therefore , the preparation period of this process is longer, and the energy consumption is larger, which is not conducive to industrial production
Obviously, there are also problems such as long preparation cycle, low efficiency, and high energy consumption, which are not conducive to industrial production.

Method used

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Embodiment Construction

[0017] What the present invention provides is a fast energy-saving sintering high dielectric constant (Ta 2 o 5 ) 1-x (TiO 2 ) x The craft of ceramics. The core part of the process is: the Ta 2 o 5 and TiO 2 Powder according to the ratio (1-x)Ta 2 o 5 :xTiO 2Do the batching within the range of x=0.01-0.13 molar ratio, then ball mill and mix for 18 hours, pre-calcine at 1200°C for 12 hours, then ball-mill the pre-fired powder for 18 hours, and dry; Concentration is after the polyvinyl alcohol (PVA) glue of 3% is mixed into powder (the weight of glue is 6% of powder gross weight), takes by weighing the powder of about 1.5-1.8 gram weight, under 200 MPa pressure, Pressed into a sheet-shaped green body with a diameter of 13mm and a thickness of 2mm; the temperature was raised to 1550°C at a rate of 100°C / hour, and kept at a temperature of 1 hour, and then lowered to room temperature at a rate of 150°C / hour, and finally sintered into a dense sheet Shaped ceramic body, it...

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Abstract

The present invention relates to a process for quickly sintering (Ta2O5)1-x(TiO2)x system ceramic, belonging to the field of Ta2O5)1-x(TiO2)x system dielectric ceramic preparation technology. Said process includes the following steps: preparing Ta2O5 and TiO2 powder material according to a certain ratio, ball-grinding and mixing them and drying, precalcining for 12 hr at 1200 deg.C, ball-grinding precalcined powder material and drying, adding polyvinyl alcohol (PVA) adhesive, pressing the above-mentioned powder material into flake blank body, heating to 1550 deg.C, heat-insulating for 1 hr, cooling to room temperature, sintering so as to obtain compact flake ceramic body.

Description

technical field [0001] The present invention belongs to (Ta 2 o 5 ) 1-x (TiO 2 ) x The field of preparation of system dielectric ceramics. Background technique [0002] Computer memory is divided into two categories: random access memory (RAM) and read-only memory (ROM). RAM can be divided into dynamic random access memory (Dynamic Random Access Memory, referred to as DRAM), static random access memory (SRAM) and video random access memory (VRAM). DRAM is generally used as the main memory on file servers and workstations. It occupies the largest proportion in various computer memories and is an important component for computer storage. [0003] At the heart of DRAM is the capacitive dielectric layer. At present, the capacitor dielectric layer in DRAM is made of SiO 2 or Si 3 N 4 Made, its advantage is compatible with semiconductor process, the disadvantage is that SiO 2 and Si 3 N 4 The relative permittivity ε r Too small (3.8 and 6.0 respectively). With the r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/462
Inventor 王越朱学文蒋毅坚
Owner BEIJING UNIV OF TECH
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