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Apparatus and method for replacing a media content item

An unsaturated, substrate-based technology, applied in chemical instruments and methods, polishing compositions containing abrasives, and other chemical processes, can solve problems that cannot fully meet the stringent requirements of the semiconductor industry

Inactive Publication Date: 2005-10-26
CMC MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While current chemical-mechanical polishing systems are capable of removing the copper surface layer from titania substrates, such systems do not fully meet the demanding requirements of the semiconductor industry

Method used

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  • Apparatus and method for replacing a media content item
  • Apparatus and method for replacing a media content item
  • Apparatus and method for replacing a media content item

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] This example illustrates the effect of an amphiphilic nonionic surfactant in a polishing composition on copper dishing and erosion values ​​as a function of the surfactant HLB value.

[0051] Similar patterned substrates (Sematech 931 mask wafers) containing copper, tantalum and titanium dioxide were polished with different polishing compositions (Polishing Compositions 1A-1E). Each polishing composition contained 12% by weight condensation-precipitated silica, 0.10% by weight benzotriazole, 0.30% by weight acetic acid, 3% by weight hydrogen peroxide, and 200 ppm of surfactant, pH 10 (adjusted with KOH ). Polishing compositions 1A (comparative example) and 1B-1E (present invention) respectively contain polyoxyethylene (2) isooctylphenyl ether with HBL of 4.6, polyoxyethylene (5) isooctylphenyl ether with HBL of 10 Ether, polyoxyethylene(9) nonylphenyl ether with HBL 13, polyoxyethylene(40) nonylphenyl ether with HBL 17.8, and polyoxyethylene(100) nonylphenyl ether with...

Embodiment 2

[0056] This example illustrates the effect of an amphiphilic nonionic surfactant on copper dishing and erosion values ​​as a function of surfactant concentration in a polishing composition.

[0057] Similar patterned substrates (Sematech 931 shielded wafers) containing copper, tantalum and titanium dioxide were polished with different polishing compositions (Polishing Compositions 2A-2D). Each polishing composition contained 12% by weight condensation-precipitated silica, 0.10% by weight benzotriazole, 0.30% by weight acetic acid, and 3% by weight hydrogen peroxide, at a pH of 10 (adjusted with KOH). Polishing Compositions 2A-2D (invention) also included 0, 100, 125, and 250 ppm, respectively, of 2,4,7,9-tetramethyl-5-decyne-4,7-diol ethoxylated surfactant agent. The percent improvement in dishing in the 50 micron line region of the patterned substrate was measured for each polishing composition.

[0058] image 3 A graph showing % improvement in copper dishing for 50 micro...

Embodiment 3

[0061] This example demonstrates that the presence of amphiphilic nonionic surfactants in the polishing compositions of the present invention can be used in first step copper polishing for removal of large amounts of copper.

[0062] Similar blanket wafer substrates containing copper, tantalum, or titanium dioxide were polished with different polishing compositions (Polishing Compositions 3A-3F). Polishing Composition 3A (blank) was free of amphiphilic nonionic surfactants and comprised 0.7% by weight lactic acid, 1.11% by weight polyacrylic acid, 0.111% by weight benzotriazole, 3% by weight hydrogen peroxide, and 0.556% by weight heat Decomposed alumina, the fumed alumina was coated with polystyrene sulfonic acid (0.5% by weight alumina and 0.052% by weight polystyrene sulfonic acid) at a pH of 4.5. Polishing Compositions 3B-3E (invention) were identical to Polishing Composition 3A, except that they also included 0.02%, 0.05%, 0.075%, and 0.10% by weight of polyalkylene oxide...

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Abstract

The invention provides methods of polishing a substrate comprising (i) contacting a substrate comprising at least one metal layer comprising copper with a chemical-mechanical polishing (CMP) system and (ii) abrading at least a portion of the metal layer comprising copper to polish the substrate. The CMP system comprises (a) an abrasive, (b) an amphiphilic nonionic surfactant, (c) a means for oxidizing the metal layer, (d) an organic acid, (e) a corrosion inhibitor, and (f) a liquid carrier. The invention further provides a two-step method of polishing a substrate comprising a first metal layer and a second, different metal layer. The first metal layer is polishing with a first CMP system comprising an abrasive and a liquid carrier, and the second metal layer is polished with a second CMP system comprising (a) an abrasive, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier.

Description

technical field [0001] The present invention relates to a method for chemical-mechanical polishing of substrates, particularly substrates having copper-containing metal layers, using chemical-mechanical polishing compositions comprising amphiphilic nonionic surfactants. Background technique [0002] Compositions and methods for planarizing or polishing the surface of a substrate, particularly for chemical-mechanical polishing (CMP), are well known in the art. Polishing compositions (known as polishing slurries) typically contain abrasive substances in an aqueous solution and are applied to a surface by contacting a polishing pad saturated with the polishing composition with the surface. Typical abrasive materials include silica, ceria, alumina, zirconia and tin oxide. For example, US Patent No. 5,527,423 describes a method for chemical-mechanical polishing of metal layers by contacting a polishing slurry containing fine metal oxide particles of high purity in an aqueous med...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09K3/14H01L21/304H01L21/3105H01L21/312H01L21/321
CPCC09G1/02H01L21/3212H01L21/304
Inventor 戴维·J·施罗德凯文·J·莫根伯格霍默·乔杰弗里·P·张伯伦约瑟夫·D·霍金斯菲利普·W·卡特
Owner CMC MATERIALS INC