High-performance (1-x) BaTi3-xNaNbO3 microwave dielectric film and preparation thereof

Abstract

The invention provides a high-performance microwave dielectric film having the structural formula of (1-x)BaTiO3-xNaNbO3, wherein the value range of x is between 0.025-0.075, the preparation consists of weighing BaCO3, TiO2, Na2CO3 and Nb2O5 powder according to the structural formula of (1-x)BaTiO3-xNaNbO3, carrying out ball grinding and drying treatment, pressing the powder into sheets with a pressure of 1-35MPa, loading the powder corresponding to sheets to be sintered into Al2O3 crucible, sealing the sheets and powder, placing the crucible into heating-furnace, elevating temperature to 800-1000 deg. C than thermal insulating 10-60 minutes, then elevating temperature again to sintering temperature, sintering for about 100-300 minutes at 1300-1650 deg. C, obtaining the corresponding ceramics, placing the corresponding ceramic sheets onto the growth chamber of the impulse deposition system, ablating the ceramics with KrF excimer pulsed laser, and depositing the spatters onto the substrates, thus preparing thin film with the thickness of 200-600nm.

Description

1. Technical field [0001] The invention relates to a microwave dielectric film material (1-x) BaTiO with high dielectric constant, high dielectric adjustability and high temperature stability 3 -xNaNbO 3 and preparation. Especially related to the preparation of Na-excess (1-x)BaTiO by solid-state reaction method 3 -xNaNbO 3 On the basis of ceramics, the corresponding thin film was obtained by controlling and optimizing the preparation conditions by using pulsed laser deposition method. 2. Background technology [0002] ABO-based 3 type perovskite oxide structure (Ba 1-x Sr x )TiO 3 The film has the characteristics of large dielectric constant, small insertion loss, and the dielectric constant can be adjusted nonlinearly through the strength of the external DC electric field. These characteristics make this kind of material applicable to dynamic random access memory (Dynamic random access memory, DRAM) and microwave devices, such as phase shifter (phase shifter), filt...

AI Technical Summary

Problems solved by technology

Based on BaTiO 3 There are many kinds of dielectric materials, such as A-site substituted BST and (Ba, Ca)TiO 3 , and Ba(Ti, Zr)O substituted at the B site 3 and Ba(Ti,Nb)O 3 , the dielectric properties of these materials have been extensively studied, however, the dielectric tunability of these materials is different from the reported polycrystalline (Ba 1-λ Sr λ )TiO 3 The maximum value of the film (75%, measured under the condition of an applied electric field of 1MV / cm) is small

It is worth noting that experiments have shown that for BaTiO 3 Simultaneous double substitution of A-site and B-site may significantly improve the dielectric properties of the material

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