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Heater and device for heating a wafer and method for fabricating the same

A heater and side technology, which is used in electric heating devices, semiconductor/solid-state device manufacturing, heating element materials, etc., to achieve the effects of high manufacturing yield, prevention of resistance changes, abnormal heating, wire breakage, and easy mass production

Active Publication Date: 2010-12-08
KYOCERA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Although the in-plane temperature difference of the wafer becomes smaller, it is not enough to form a uniform film on the entire surface of the wafer (W), and it is necessary to develop a heater that can heat the temperature distribution more uniformly.

Method used

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  • Heater and device for heating a wafer and method for fabricating the same
  • Heater and device for heating a wafer and method for fabricating the same
  • Heater and device for heating a wafer and method for fabricating the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0287] A silicon carbide sintered body with a thermal conductivity of 80W / (m·K) is ground and processed to produce a plurality of disc-shaped vapor chambers with a plate thickness of 4mm and an outer diameter of 230mm; The insulating layer is attached to the main surface, and the glass powder is laid by the screen printing method: a glass paste made by kneading ethyl cellulose as a binder and terpineol as an organic solvent; after heating and drying the organic solvent at 150°C, Degreasing treatment was performed at 550° C. for 30 minutes, followed by firing at a temperature of 700 to 900° C., thereby forming an insulating layer made of glass with a thickness of 200□. Next, in order to attach the resistance heating element on the insulating layer, after printing the Au powder of 20% by weight, the Pt powder of 10% by weight and the glass of 70% by weight as the conductive material with the area shape of the resistance heating element of a certain amount, the 150 °C to dry the ...

Embodiment 2

[0301] Samples were prepared in the same manner as in Example 1. Furthermore, the positioning indication part which consists of the convex part as shown in FIG. Furthermore, a ceramic heater in which grooves were mixed inside and outside for comparison was produced.

[0302] Then, a band of the resistance heating element was formed with a width of 1.5 mm, and a group of grooves was formed in the band by laser. The group of grooves is formed in the portion of the band located outside the plate-shaped ceramic body. In addition, a sample in which the interval between groups of grooves was changed was produced.

[0303] Moreover, the distance between groups can be divided into each resistance heating element area of ​​the resistance heating element to measure the resistance of each part, and the resistance of each part of each resistance heating element area can be reduced by forming grooves in the part with low resistance and making the resistance larger. . Therefore, the gro...

Embodiment 3

[0311] A silicon carbide sintered body with a thermal conductivity of 80W / (m·K) is ground and processed to produce a plurality of disc-shaped vapor chambers with a plate thickness of 4mm and an outer diameter of 230mm. The insulating layer is attached to the main surface, and the glass paste prepared by kneading ethyl cellulose as a binder and terpineol as an organic solvent with glass powder is laid by screen printing, and the organic solvent is dried by heating at 150°C Thereafter, degreasing treatment was performed at 550° C. for 30 minutes, and firing was performed at a temperature of 700 to 900° C. to form an insulating layer made of glass with a thickness of 200 □. Next, 20% by weight of Au powder, 10% by weight of Pt powder, and 70% by weight of glass were printed in a predetermined pattern shape as conductive materials in order to attach the resistance heating element to the insulating layer. Then, the organic solvent was heated and dried at 150°C, degreased at 450°C f...

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Abstract

The object of the invention is to provide a heater capable of having a high uniform heating characteristic and substantially equally heating a wafer etc. mounted thereon, and a wafer heating device using the same, as well as a method thereof. In order to solve the above object, the invention provides a heater which comprises a plate shaped body, a belt-like resistance heating element formed on the plate shaped body and having a channel for adjusting the resistance value, and a positioning mark formed on the plate shaped body, which serves as a reference for positioning the channel.

Description

technical field [0001] The present invention relates to a wafer heating apparatus mainly used when heating a wafer, for example, when forming a thin film on a wafer such as a semiconductor wafer, a liquid crystal device, or a circuit board, or applying a resist liquid (resist liquid) coated on the above-mentioned wafer. A heater suitable for drying and baking to form a resist film. Background technique [0002] In the manufacturing process of semiconductors, ceramic heaters are used to heat semiconductor wafers (hereinafter referred to simply as wafers) during the deposition process of semiconductor thin films, etching processes, and firing processes of resist films. [0003] Conventional semiconductor manufacturing devices include: a batch type that uniformly heats a plurality of wafers, and a leaf type that heats wafers one by one. The leaf type has excellent temperature controllability, and ceramic heaters are widely used as the wiring of semiconductor elements is miniat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05B3/16H05B3/02H01L21/02H05B3/20H01L21/027H05B3/10H05B3/74
Inventor 牧诚一郎竹之内浩益山启幸中村恒彦
Owner KYOCERA CORP
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