Methods and systems for rapid thermal processing
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- TAIWAN SEMICON MFG CO LTD
- Publication Date
- 2006-02-15
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The present invention relates to semiconductor manufacturing process, and in particular to rapid thermal processing (rapid thermal processing), in particular to a method and system for rapid thermal processing of semiconductor substrates. Background technique
[0002] Rapid high temperature processing has been widely used in different steps of semiconductor manufacturing process. For example, rapid high temperature processing can be used to deposit different films on semiconductor wafers. Rapid high temperature processing can also be used to implant semiconductor The ions or dopants in the wafer are annealed. Since the operating temperature of the rapid high temperature processing can be rapidly increased or decreased, the required process time is very short and the processing efficiency is also high.
[0003] In many rapid high-temperature processing applications, it is often necessary to inject a gas of a specific composition at a specific pressure i...