Methods and systems for rapid thermal processing

A high-temperature processing and fast technology, applied in the manufacture of furnaces, electrical components, semiconductors/solid-state devices, etc., can solve the deformation of the wafer, it is difficult to adjust the relative position of the heating unit and the wafer, and it is difficult to achieve uniform temperature distribution on the surface of the wafer And other issues
CN1734716AInactive Publication Date: 2006-02-15TAIWAN SEMICON MFG CO LTD

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
TAIWAN SEMICON MFG CO LTD
Publication Date
2006-02-15
Estimated Expiration
Not applicable · inactive patent

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Abstract

Methods for rapid thermal processing of semiconductor substrates are provided. An exemplary method comprises directing radiant heat energy emitted from a heat source toward a backside surface of the semiconductor substrate. Systems for rapid thermal processing also are provided. The effect of the invention is that the heat energy emitted from the heat source is lead to the back of the semiconductor substrate, and the front of the semiconductor is not radiated by the heat energy, so patterns of the front of the semiconductor substrate do not influence evenness of heat flowing, alternatively, a pyrometer is arranged on the front of the semiconductor substrate because the heat source is not set in the front of the semiconductor substrate, by this the real temperature of the front of the semiconductor substrate is exactly measured, and radiation heat energy emitted from the individually heating lamp tube of the heat source is real-time controlled.
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Description

technical field

[0001] The present invention relates to semiconductor manufacturing process, and in particular to rapid thermal processing (rapid thermal processing), in particular to a method and system for rapid thermal processing of semiconductor substrates. Background technique

[0002] Rapid high temperature processing has been widely used in different steps of semiconductor manufacturing process. For example, rapid high temperature processing can be used to deposit different films on semiconductor wafers. Rapid high temperature processing can also be used to implant semiconductor The ions or dopants in the wafer are annealed. Since the operating temperature of the rapid high temperature processing can be rapidly increased or decreased, the required process time is very short and the processing efficiency is also high.

[0003] In many rapid high-temperature processing applications, it is often necessary to inject a gas of a specific composition at a specific pressure i...

Claims

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