Epitaxy base plate in use for solid-state semiconductor device, solid-state semiconductor device, and preparation method

Abstract

Epitaxy base plate in use for solid-state semiconductor device includes a plate itself, a buffer film connected to the plate itself, at least a first surface connected to the buffer film, and first epitaxial film of coarse second surface in irregular change opposite to the first surface. The solid-state semiconductor device includes the said epitaxy base plate, and an emission unit setup at side of epitaxy base plate. Te invention also discloses a preparing method. Features of the invention are: simplifying preparing procedure, reducing cost of time, and reducing dislocation density largely by increasing number of epitaxial film with coarse surface in order to improve optical character of the prepared epitaxial film and the solid-state semiconductor device.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, in particular to an epitaxy substrate for a solid-state semiconductor device, a solid-state semiconductor device and a manufacturing method thereof. Background technique [0002] Currently common solid-state semiconductor devices generally include light-emitting diode (LED) devices, laser diode (LD) devices, or semiconductor radio frequency (radio frequency) devices. Generally speaking, the aforementioned LED devices, LD devices, and semiconductor radio frequency devices are composed of an epitaxial substrate and a semiconductor element formed on the epitaxial substrate (for example: a radio frequency element, or a light emitting element containing a p-n junction (junction)) constituted. [0003] For example, the basic blue or green LED structure is composed of a sapphire substrate, a buffer layer formed on the sapphire substrate, an n-type gallium nitride form...

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Problems solved by technology

[0010] Although the previously mentioned patent documents and papers mentioned above can reduce the penetrating dislocation formed in the epitaxial film during the epitaxy process, whether it is to form a patterned substrate or to form a patterned non-dislocation on the epitaxial film Crystal film requires the use of lithography equipment and process, therefore, it also increases equipment cost and time cost virtually

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