Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metal/semiconductor/metallic structure TiO2 ultraviolet photodetector and preparation

A metal structure, detector technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as complex reaction processes

Inactive Publication Date: 2006-09-06
JILIN UNIV
View PDF0 Cites 24 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reaction process in the alkoxide-ethanol-water system is very complicated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal/semiconductor/metallic structure TiO2 ultraviolet photodetector and preparation
  • Metal/semiconductor/metallic structure TiO2 ultraviolet photodetector and preparation
  • Metal/semiconductor/metallic structure TiO2 ultraviolet photodetector and preparation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] A:

[0054] a. Put 10mL of Ti(OC 4 h 9 ) 4 Add it dropwise to 100mL of absolute ethanol under vigorous stirring, then add dropwise 10mL of glacial acetic acid, and after 30min of stirring, a uniform and transparent light yellow solution is obtained; slowly add 10mL of deionized water to the above-mentioned solution at a rate of 2mL / min In the solution, continue to stir for 1 h to obtain a uniform and transparent light yellow sol, and place it for aging for 3 h for later use;

[0055] b. Use aged sol to grow SiO 2 Preparation of TiO on Si substrate 2 Thin film, the film thickness is 0.2μm, the film is made by spin coating method, and the rotation speed is 2500rpm;

[0056] c. Finally, put the film into a muffle furnace for calcination, the temperature is controlled at 650°C, and the calcination time is 2 hours. After that, the power is turned off and the film is naturally cooled to room temperature with the furnace.

[0057] B:

[0058] In nanocrystalline TiO 2 T...

Embodiment 2

[0075] A:

[0076] a. Put 10mL of Ti(OC 4 h 9 ) 4 Add it dropwise to 100mL of absolute ethanol under vigorous stirring, then add dropwise 10mL of glacial acetic acid, and after 30min of stirring, a uniform and transparent light yellow solution is obtained; slowly add 10mL of deionized water to the above-mentioned solution at a rate of 2mL / min In the solution, continue to stir for 1 h to obtain a uniform and transparent light yellow sol, and place it for aging for 3 h for later use;

[0077] b. Use aged sol to grow SiO 2 Preparation of TiO on Si substrate 2 Thin film, the film thickness is 0.18μm, the film is made by spin coating method, and the rotation speed is 3000rpm;

[0078] c. Finally, put the film into a muffle furnace for calcination, the temperature is controlled at 600°C, and the calcination time is 2 hours. After that, the power is turned off and the film is naturally cooled to room temperature with the furnace.

[0079] B:

[0080] In nanocrystalline TiO 2 ...

Embodiment 3

[0097] A:

[0098] a. Put 10mL of Ti(OC 4 h 9 ) 4 Add dropwise into 100mL of absolute ethanol under vigorous stirring, then dropwise add 10mL of glacial acetic acid, after 30min of stirring, a uniform and transparent light yellow solution is obtained; slowly add 10mL of deionized water to the above-mentioned solution at a rate of 2mL / min In the solution, continue to stir for 1 h to obtain a uniform and transparent light yellow sol, and place it for aging for 3 h for later use;

[0099] b. Use aged sol to grow SiO 2 Preparation of TiO on Si substrate 2 Thin film, the thickness of the film is 180nm, the method of spin coating is used for film formation, and the rotation speed is 3000rpm;

[0100] c. Finally, put the film into a muffle furnace for calcination, the temperature is controlled at 600°C, and the calcination time is 2 hours. After that, the power is turned off and the film is naturally cooled to room temperature with the furnace.

[0101] B:

[0102] Using tin foi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Widthaaaaaaaaaa
Login to View More

Abstract

The present invention refers to photovoltaic type ultraviolet light decetor and preparation method with metal-semiconductor-metal structure (MSM) using nanocrystal TiO 2 thin-film material as basal body. It contains in turn from the bottom up: using sol-gel process on insulating substrate grown nanocrystal TiO 2 film, finger inserting metal electrode on nanocrystal TiO film prepared by vaporization or sputtering method. Said decetor preparation method is: first adopting sol-gel technology to grow single-layer uniform tight nanocrystal TiO 2 film on insulating substrate, then sputtering a layer metal on nanocrystal TiO 2 thin-film surface, finally utilizing standard photetch forming finger inserting electrode. Said invention prepared MSM constructional photovoltaic type ultraviolet light decetor possess very evident photoresponse to wavelength from 230 to 280 nm ultraviolet band.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular to a nanocrystalline TiO 2 The invention relates to a photovoltaic ultraviolet light detector with a metal-semiconductor-metal structure (MSM) as a substrate and a preparation method of the ultraviolet light detector. Background technique [0002] Ultraviolet photodetectors have broad application prospects in national defense, ultraviolet astronomy, environmental monitoring, fire detection, turbine engine combustion efficiency monitoring, combustible gas composition analysis and biological cell cancer detection, etc., and have extremely high military and civilian value. In recent years, it has become one of the hot spots in the field of photoelectric detection in the world. [0003] At present, the semiconductor materials used in ultraviolet detectors are mostly GaN, SiC, AlGaN, ZnO and diamond films. These materials are not only difficult to prepare, but also have strict requ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/08H01L31/18
CPCY02P70/50
Inventor 薛海林张歆东刘彩霞董玮周敬然阮圣平陈维友徐宝琨
Owner JILIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com