Rapid thermal process for silicon sheet capable of obtaining denuded zone and product thereof

A technology of rapid heat treatment and process method, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems that cannot reach 10μm, clean area thickness, etc.

Active Publication Date: 2006-09-27
GRINM SEMICONDUCTOR MATERIALS CO LTD
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Problems solved by technology

This patent has some disadvantages: firstly, it requires strict control of oxygen partial pressure in the rapid annealing process,

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  • Rapid thermal process for silicon sheet capable of obtaining denuded zone and product thereof
  • Rapid thermal process for silicon sheet capable of obtaining denuded zone and product thereof
  • Rapid thermal process for silicon sheet capable of obtaining denuded zone and product thereof

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[0040] Example

[0041] In H 2 / NH 3 Under / Ar atmosphere, use different cooling rates to perform RTA treatment on silicon wafers. During the experiment, except for the different holding time, other process conditions are the same. After RTA treatment, the density of COP was measured. A heat treatment process of heat preservation at 700°C for 4 hours and heat preservation at 900°C for 16 hours generates oxygen precipitation and obtains a clean area. The specific process parameters and experimental results are shown in Table 1.

[0042] It can be seen from Table 1 that the thickness of the clean zone becomes thinner as the holding time increases, and the oxygen precipitation density decreases as the holding time increases. The COP density decreases as the holding time increases, but it will not decrease all the time. 30s holding time is enough to eliminate COP, Figure 4 The clean area obtained for 15S insulation, such as Figure 4 As shown, Figure 4 The symbols in are respectivel...

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Abstract

This invention relates to a silicon fast heat process technology for obtaining clear area and its product. The method includes: (1) in Ar/NH3/H2 or N2/NH3/H2, heating silicon sheet up to 1150- 1250DEG.,then keeping the temperature of the silicon sheet under 1150-1250DEG., then lowering temperature by 20-100DEG./S speed to normal temperature; (2)anneal by regular method ; (3) heat processing by regular method to obtain the silicon sheet with clear area. This technology can control the thickness of the clear area between 5-40 mum, under which the technology can improve the oxygen deposition density of the impurity absorbing area and lower COP density of the surface.

Description

technical field [0001] The present invention is a process method and its product which utilizes a rapid thermal process (Rapid Thermal Process) process to process single crystal silicon polished wafers to obtain a clean area while reducing surface COP (Crystal original Pits) defect density. Specifically, it is a rapid heat treatment process for silicon wafers. Through the processed silicon wafers, not only an ideal clean area thickness can be obtained in the device process, but also a lower COP density in the device working area. Background technique [0002] Silicon wafer is the main substrate material of modern ultra-large-scale integrated circuits. Generally, silicon single crystal is obtained by Czochralski method, and then integrated circuit-level semiconductor silicon is obtained after slicing, chamfering, grinding, corrosion, polishing and other processes. piece. The silicon single crystal obtained by the Czochralski method inevitably has the entry of oxygen impuriti...

Claims

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Application Information

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IPC IPC(8): H01L21/324
Inventor 冯泉林周旗刚王敬刘斌万关良张果虎屠海令
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD
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